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Datasheet SPB80P06P Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | SPB80P06P | SIPMOS Power-Transistor Preliminary data
SPP80P06P SPB80P06P
SIPMOS ® Power-Transistor
Features
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Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current
P-Channel Enhancement mode Avalanche rated dv/dt rated 175°C operating temperature
VDS RDS(on) ID
-60 0.023 -80
V
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 Infineon Technologies |
 |
| 1 | SPB80P06P | Power-Transistor
Preliminary data
SPP80P06P SPB80P06P
SIPMOS ® Power-Transistor
Features
·
Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current
P-Channel Enhancement mode Avalanche rated dv/dt rated 175°C operating temperature
VDS RDS(on) ID
-60 |
Infineon Technologies |
|
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| Número de pieza | Descripción | Fabricantes | |
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