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Datasheet SPB80N03 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 12 | SPB80N03 | SIPMOS Power Transistor SPP80N03 SIPMOS® Power Transistor
Features • N channel
•
Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current
VDS ID
30 80
V A
Enhancement mode
RDS(on) 0.006 Ω
• Avalanche rated • dv/dt rated • 175°C operating temperature
Type SPP80N03 |
 Siemens Semiconductor Group |
 |
| 11 | SPB80N03L | Power Transistor SPP80N03L SIPMOS® Power Transistor
Features • N channel
• Enhancement mode
Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current
VDS ID
30 80
V A
RDS(on) 0.006 Ω
• Avalanche rated • Logic Level • dv/dt rated • 175°C operating temperature |
 Siemens |
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| 10 | SPB80N03S2-03 | OptiMOS Power-Transistor SPI80N03S2-03 SPP80N03S2-03,SPB80N03S2-03
OptiMOS® Power-Transistor
Feature
• N-Channel
Product Summary VDS RDS(on) max. SMD version ID
P- TO263 -3-2
30 3.1 80
P- TO220 -3-1
V mΩ A
• Enhancement mode • Excellent Gate Charge x RDS(on) product (FOM)
• Superior thermal resistance
P- TO2 |
 Infineon Technologies |
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| 9 | SPB80N03S2-03 | OptiMOS Power-Transistor
SPI80N03S2-03 SPP80N03S2-03,SPB80N03S2-03
OptiMOS® Power-Transistor
Feature
• N-Channel
Product Summary VDS RDS(on) max. SMD version ID
P- TO263 -3-2
30 3.1 80
P- TO220 -3-1
V mΩ A
• Enhancement mode • Excellent Gate Charge x RDS(on) product (FOM)
• Superior ther |
Infineon Technologies |
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
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