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Datasheet SPAKMC331MFC16 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | SPAKMC331MFC16 | Users Manual MC68331
User’s Manual
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the | Motorola Semiconductors | data |
SPA Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | SPA-1118 | Power Amplifier SPA-1118
Product Description
Sirenza Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliab Sirenza Microdevices amplifier | | |
2 | SPA-1118Z | Power Amplifier SPA-1118
Product Description
Sirenza Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliab Sirenza Microdevices amplifier | | |
3 | SPA-1218 | Power Amp Preliminary
Product Description
Stanford Microdevices’ SPA-1218 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces r Stanford Microdevices data | | |
4 | SPA-1318 | Power Amplifier Product Description
Sirenza Microdevices’ SPA-1318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and co Sirenza Microdevices amplifier | | |
5 | SPA-1426Z | 0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER PreliminarySPA-1426Z
0.7GHz to 2.2GHz 1W InGaP HBT Amplifier
SPA-1426Z
0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER
RoHS Compliant and Pb-Free Product Package: SOF-26
Product Description
RFMD’s SPA-1426Z is a high linearity single-stage class A Heterojunction Bipolar Transistor (HBT) power amplifie RFMD amplifier | | |
6 | SPA-1526Z | 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER PreliminarySPA-1526Z
0.7GHz to 2.2GHz 2W InGaP HBT Amplifier
SPA-1526Z
0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER
RFMD Green, RoHS Compliant, Pb-Free Product Package: SOF-26
Product Description
RFMD’s SPA-1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor (HBT) power RFMD amplifier | | |
7 | SPA-1712 | Buzzer SMT Buzzer SPA-1712 series SMT Buzzer
P I
DIMENSIONS
47
Top View
Model No Rated Voltage Operating Voltage Max. Rated Current Min. Sound Pressure Level Resonant Frequency Operating Temperature Tone Nature Weight
SPA-1712 12VDC
1.5~16 VDC 10mA at 12VDC 85dB / 12VDC/ 10cm 4.0¡À0.5KHz
-20~+80¡æ Ningbo data | | |
8 | SPA-2118 | 850 MHz 1 Watt Power Amplifier with Active Bias Product Description
Sirenza Microdevices’ SPA-2118 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and co ETC amplifier | | |
9 | SPA-2318 | Power Amp SPA-2318
Product Description
Sirenza Microdevices’ SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliab Sirenza Microdevices data | |
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Número de pieza | Descripción | Fabricantes | |
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