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Datasheet SPA16N50C3 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | SPA16N50C3 | Cool MOS Power Transistor SPP16N50C3 SPI16N50C3, SPA16N50C3
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge
VDS @ Tjmax RDS(on) ID
560 0.28 16
V Ω A
• Periodic avalanche rated
PG-TO220FP PG-TO262
PG-TO220
• Extreme dv/dt rated
2
• Ultra low effect | Infineon Technologies | transistor |
2 | SPA16N50C3 | Power Transistor SPP16N50C3 SPI16N50C3, SPA16N50C3
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge
VDS @ Tjmax RDS(on) ID
560 0.28 16
V Ω A
• Periodic avalanche rated
PG-TO220FP PG-TO262
PG-TO220
• Extreme dv/dt rated
2
• Ultra low effect | Infineon Technologies | transistor |
SPA Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | SPA-1118 | Power Amplifier SPA-1118
Product Description
Sirenza Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliab Sirenza Microdevices amplifier | | |
2 | SPA-1118Z | Power Amplifier SPA-1118
Product Description
Sirenza Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliab Sirenza Microdevices amplifier | | |
3 | SPA-1218 | Power Amp Preliminary
Product Description
Stanford Microdevices’ SPA-1218 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces r Stanford Microdevices data | | |
4 | SPA-1318 | Power Amplifier Product Description
Sirenza Microdevices’ SPA-1318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and co Sirenza Microdevices amplifier | | |
5 | SPA-1426Z | 0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER PreliminarySPA-1426Z
0.7GHz to 2.2GHz 1W InGaP HBT Amplifier
SPA-1426Z
0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER
RoHS Compliant and Pb-Free Product Package: SOF-26
Product Description
RFMD’s SPA-1426Z is a high linearity single-stage class A Heterojunction Bipolar Transistor (HBT) power amplifie RFMD amplifier | | |
6 | SPA-1526Z | 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER PreliminarySPA-1526Z
0.7GHz to 2.2GHz 2W InGaP HBT Amplifier
SPA-1526Z
0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER
RFMD Green, RoHS Compliant, Pb-Free Product Package: SOF-26
Product Description
RFMD’s SPA-1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor (HBT) power RFMD amplifier | | |
7 | SPA-1712 | Buzzer SMT Buzzer SPA-1712 series SMT Buzzer
P I
DIMENSIONS
47
Top View
Model No Rated Voltage Operating Voltage Max. Rated Current Min. Sound Pressure Level Resonant Frequency Operating Temperature Tone Nature Weight
SPA-1712 12VDC
1.5~16 VDC 10mA at 12VDC 85dB / 12VDC/ 10cm 4.0¡À0.5KHz
-20~+80¡æ Ningbo data | | |
8 | SPA-2118 | 850 MHz 1 Watt Power Amplifier with Active Bias Product Description
Sirenza Microdevices’ SPA-2118 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and co ETC amplifier | | |
9 | SPA-2318 | Power Amp SPA-2318
Product Description
Sirenza Microdevices’ SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliab Sirenza Microdevices data | |
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Número de pieza | Descripción | Fabricantes | |
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