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Datasheet SKIM300GD126D Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1SKIM300GD126DIGBT Modules

SKiM 300 GD 126 D Absolute Maximum Ratings Symbol Conditions 1) VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Tcop Visol humidity climate Values Units 1200 1200 260 / 200 520 / 400 ± 20 625 –40 ... +150 (125) 125 2500 40/125/56 230 / 180 460 / 360 2200 24 200 A A A A2s V V A A V W °
Semikron International
Semikron International		igbt
2SKiM300GD126DLIGBT Modules

SKiM 300GD126DL Absolute Maximum Ratings Symbol Conditions IGBT /0*  56 /0* 9 & '    + ", &42' -  + 1 (   + ",-.      Values 1"22 "42 &"22' 722 8"2 : ;2 <<<= 1,2 &1",' 1", ",22 "22 &1;,' ;22 ""22 Units / ( ><    (  . 1 (<  +
Semikron International
Semikron International		igbt


SKI Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1SKI-FF530Infrared emitting diode which mounted high power 850 nm IR CHIP

1.0 Ta = 25 Relative luminous intensity ( % ) 0.8 0.6 0.4 0.2 0.0 730 770 810 850 890 930 970 Wavelength λ ( nm ) 2
ETC
ETC		diode
2SKI03021N-channel Trench Power MOSFET

30 V, 85 A, 2.1 mΩ Low RDS(ON) N ch Trench Power MOSFET SKI03021 Features  V(BR)DSS --------------------------------- 30 V (ID = 100 µA)  ID ---------------------------------------------------------- 85 A  RDS(ON) ----------- 2.6 mΩ max. (VGS = 10 V, ID = 110A)  Qg------ 42.3 nC (VGS
Sanken
Sanken		mosfet
3SKI03036N-channel Trench Power MOSFET

30 V, 80 A, 3.2 mΩ Low RDS(ON) N ch Trench Power MOSFET SKI03036 Features  V(BR)DSS --------------------------------- 30 V (ID = 100 µA)  ID ---------------------------------------------------------- 80 A  RDS(ON) ----------3.9 mΩ max. (VGS = 10 V, ID = 57.0 A)  Qg------16.5 nC (VGS
Sanken
Sanken		mosfet
4SKI03063N-channel Trench Power MOSFET

30 V, 40 A, 5.5 mΩ Low RDS(ON) N ch Trench Power MOSFET SKI03063 Features  V(BR)DSS --------------------------------- 30 V (ID = 100 µA)  ID ---------------------------------------------------------- 40 A  RDS(ON) ----------6.8 mΩ max. (VGS = 10 V, ID = 39.5 A)  Qg------- 9.3 nC (VGS
Sanken
Sanken		mosfet
5SKI03087N-channel Trench Power MOSFET

30 V, 40 A, 7.6 mΩ Low RDS(ON) N ch Trench Power MOSFET SKI03087 Features  V(BR)DSS --------------------------------- 30 V (ID = 100 µA)  ID ---------------------------------------------------------- 40 A  RDS(ON) ----------9.4 mΩ max. (VGS = 10 V, ID = 31.5 A)  Qg------- 7.1 nC (VGS
Sanken
Sanken		mosfet
6SKI04024N-channel Trench Power MOSFET

40 V, 85 A, 2.6 mΩ Low RDS(ON) N ch Trench Power MOSFET SKI04024 Features  V(BR)DSS --------------------------------- 40 V (ID = 100 µA)  ID ---------------------------------------------------------- 85 A  RDS(ON) ----------3.2 mΩ max. (VGS = 10 V, ID = 82.5 A)  Qg------44.9 nC (VGS
Sanken
Sanken		mosfet
7SKI04033N-channel Trench Power MOSFET

40 V, 80 A, 3.1 mΩ Low RDS(ON) N ch Trench Power MOSFET SKI04033 Features  V(BR)DSS --------------------------------- 40 V (ID = 100 µA)  ID ---------------------------------------------------------- 80 A  RDS(ON) ----------3.9 mΩ max. (VGS = 10 V, ID = 58.5 A)  Qg------26.4 nC (VGS
Sanken
Sanken		mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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