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Datasheet SKIIP313GD122-3DUL Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | SKIIP313GD122-3DUL | IGBT POWER MODULE SKiiP 313GD122-3DUL
Absolute Maximum Ratings Symbol Conditions IGBT
= $ = ) =$ 5 ; * 57 F ?
CD = *
!
; (1 <
2
"
Values
)(&& A&& B (& +&& ((1 (+& ).& (..& (+ * 0& /// G )1& )(1 +&&& 0&&
Units
= = = # F < =
9"
|  Semikron | igbt |
SKI Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | SKI-FF530 | Infrared emitting diode which mounted high power 850 nm IR CHIP
1.0
Ta = 25 Relative luminous intensity ( % )
0.8
0.6
0.4
0.2
0.0 730 770 810 850 890 930 970
Wavelength λ ( nm )
2
 ETC diode | | |
| 2 | SKI03021 | N-channel Trench Power MOSFET 30 V, 85 A, 2.1 mΩ Low RDS(ON) N ch Trench Power MOSFET
SKI03021
Features
V(BR)DSS --------------------------------- 30 V (ID = 100 µA) ID ---------------------------------------------------------- 85 A RDS(ON) ----------- 2.6 mΩ max. (VGS = 10 V, ID = 110A) Qg------ 42.3 nC (VGS  Sanken mosfet | | |
| 3 | SKI03036 | N-channel Trench Power MOSFET 30 V, 80 A, 3.2 mΩ Low RDS(ON) N ch Trench Power MOSFET
SKI03036
Features
V(BR)DSS --------------------------------- 30 V (ID = 100 µA) ID ---------------------------------------------------------- 80 A RDS(ON) ----------3.9 mΩ max. (VGS = 10 V, ID = 57.0 A) Qg------16.5 nC (VGS Sanken mosfet | | |
| 4 | SKI03063 | N-channel Trench Power MOSFET 30 V, 40 A, 5.5 mΩ Low RDS(ON) N ch Trench Power MOSFET
SKI03063
Features
V(BR)DSS --------------------------------- 30 V (ID = 100 µA) ID ---------------------------------------------------------- 40 A RDS(ON) ----------6.8 mΩ max. (VGS = 10 V, ID = 39.5 A) Qg------- 9.3 nC (VGS Sanken mosfet | | |
| 5 | SKI03087 | N-channel Trench Power MOSFET 30 V, 40 A, 7.6 mΩ Low RDS(ON) N ch Trench Power MOSFET
SKI03087
Features
V(BR)DSS --------------------------------- 30 V (ID = 100 µA) ID ---------------------------------------------------------- 40 A RDS(ON) ----------9.4 mΩ max. (VGS = 10 V, ID = 31.5 A) Qg------- 7.1 nC (VGS Sanken mosfet | | |
| 6 | SKI04024 | N-channel Trench Power MOSFET 40 V, 85 A, 2.6 mΩ Low RDS(ON) N ch Trench Power MOSFET
SKI04024
Features
V(BR)DSS --------------------------------- 40 V (ID = 100 µA) ID ---------------------------------------------------------- 85 A RDS(ON) ----------3.2 mΩ max. (VGS = 10 V, ID = 82.5 A) Qg------44.9 nC (VGS Sanken mosfet | | |
| 7 | SKI04033 | N-channel Trench Power MOSFET 40 V, 80 A, 3.1 mΩ Low RDS(ON) N ch Trench Power MOSFET
SKI04033
Features
V(BR)DSS --------------------------------- 40 V (ID = 100 µA) ID ---------------------------------------------------------- 80 A RDS(ON) ----------3.9 mΩ max. (VGS = 10 V, ID = 58.5 A) Qg------26.4 nC (VGS Sanken mosfet | | |
| 8 | SKI04044 | N-channel Trench Power MOSFET 40 V, 80 A, 4.1 mΩ Low RDS(ON) N ch Trench Power MOSFET
SKI04044
Features
V(BR)DSS --------------------------------- 40 V (ID = 100 µA) ID ---------------------------------------------------------- 80 A RDS(ON) ----------5.2 mΩ max. (VGS = 10 V, ID = 42.8 A) Qg------16.0 nC (VGS Sanken mosfet | | |
| 9 | SKI06048 | N-channel Trench Power MOSFET 60 V, 85 A, 3.9 mΩ Low RDS(ON) N ch Trench Power MOSFET
SKI06048
Features
V(BR)DSS --------------------------------- 60 V (ID = 100 µA) ID ---------------------------------------------------------- 85 A RDS(ON) ----------4.9 mΩ max. (VGS = 10 V, ID = 55.0 A) Qg------44.9 nC (VGS Sanken mosfet | |
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nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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