|
|
Datasheet SIGC81T120R2C Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | SIGC81T120R2C | IGBT Chip
SIGC81T120R2C
IGBT Chip in NPT-technology
FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • positive temperature coefficient • easy paralleling • integrated gate resistor
This chip is used for: • power module BSM 50GD120DN2 Applications: • drive |
 Infineon Technologies |
 |
| 2 | SIGC81T120R2CL | IGBT Chip
SIGC81T120R2CL
IGBT Chip in NPT-technology
FEATURES: • 1200V NPT technology 180µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor
This chip is used for: • power module BSM50GD120DLC |
Infineon Technologies |
|
| 1 | SIGC81T120R2CS | IGBT Chip
Preliminary
SIGC81T120R2CS
IGBT Chip in NPT-technology
FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor
This chip is used for: • IGBT Modules A |
Infineon Technologies |
|
| Esta página es del resultado de búsqueda del SIGC81T120R2C. Si pulsa el resultado de búsqueda de SIGC81T120R2C se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Enlace url :
[1]
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |