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Datasheet SIGC156T120R2C Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | SIGC156T120R2C | IGBT Chip
SIGC156T120R2C
IGBT Chip in NPT-technology
FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor
This chip is used for: • power module BSM100GD120DN2 |
Infineon Technologies |
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3 | SIGC156T120R2CL | IGBT Chip
SIGC156T120R2CL
IGBT Chip in NPT-technology
FEATURES: • 1200V NPT technology • 180µm chip • low turn-off losses • positive temperature coefficient • easy paralleling • integrated gate resistor
This chip is used for: • power module BSM100GD120DLC Applications: � |
Infineon Technologies |
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2 | SIGC156T120R2CQ | IGBT Chip
SIGC156T120R2CQ
IGBT Chip in Fieldstop-technology
FEATURES: • 1200V Fieldstop technology 120µm chip • low turn-off losses • short tail current • positive temperature coefficient • integrated gate resistor
This chip is used for: • IGBT Modules
C
Applications: • |
Infineon Technologies |
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1 | SIGC156T120R2CS | IGBT Chip
SIGC156T120R2CS
IGBT Chip in NPT-technology
FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor
This chip is used for: • IGBT Modules Applications: |
Infineon Technologies |
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Número de pieza | Descripción | Fabricantes | |
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