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Datasheet SICDS50V6 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | SICDS50V6 | Current Sensors SICDS50V6 Current Sensors
Features
Hall effect measuring principle Galvanic isolation between primary and secondary circuit Low power consumption Extended measuring range Insulated plastic case recognized according to UL 94-V0
I PN = 50A
Advantages
� | SEC | sensor |
SIC Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | SIC02A065NS | SILICON CARBIDE SCHOTTKY DIODE SiC02A065NS
SILICON CARBIDE SCHOTTKY DIODE
Voltage
650 V
Current
2A
Features
Temperature Independent Switching Behavior Low Conduction and Switching Loss High Surge Current Capability Positive Temperature Coefficient on VF Fast Reverse Recovery
Mechanical Data
Case: M Pan Jit International diode | | |
2 | SIC02A065T | SILICON CARBIDE SCHOTTKY DIODE SiC02A065T
SILICON CARBIDE SCHOTTKY DIODE
Voltage
650 V
Current
2A
Features
Temperature Independent Switching Behavior Low Conduction and Switching Loss High Surge Current Capability Positive Temperature Coefficient on VF Fast Reverse Recovery
Mechanical Data
Case: Mo Pan Jit International diode | | |
3 | SIC02A120S | SILICON CARBIDE SCHOTTKY DIODE SiC02A120S
SILICON CARBIDE SCHOTTKY DIODE
Voltage 1200 V Current
2A
Features
Temperature Independent Switching Behavior Low Conduction and Switching Loss High Surge Current Capability Positive Temperature Coefficient on VF Fast Reverse Recovery
Mechanical Data
Case: Mol Pan Jit International diode | | |
4 | SIC04A065ND | SILICON CARBIDE SCHOTTKY DIODE SiC04A065ND
SILICON CARBIDE SCHOTTKY DIODE
Voltage
650 V
Current
4A
Features
Temperature Independent Switching Behavior Low Conduction and Switching Loss High Surge Current Capability Positive Temperature Coefficient on VF Fast Reverse Recovery
Mechanical Data
Case: M Pan Jit International diode | | |
5 | SIC04A065NS | SILICON CARBIDE SCHOTTKY DIODE SiC04A065NS
SILICON CARBIDE SCHOTTKY DIODE
Voltage
650 V
Current
4A
Features
Temperature Independent Switching Behavior Low Conduction and Switching Loss High Surge Current Capability Positive Temperature Coefficient on VF Fast Reverse Recovery
Mechanical Data
Case: M Pan Jit International diode | | |
6 | SIC04A065T | SILICON CARBIDE SCHOTTKY DIODE SiC04A065T
SILICON CARBIDE SCHOTTKY DIODE
Voltage
650 V
Current
4A
Features
Temperature Independent Switching Behavior Low Conduction and Switching Loss High Surge Current Capability Positive Temperature Coefficient on VF Fast Reverse Recovery
Mechanical Data
Case: Mo Pan Jit International diode | | |
7 | SiC06A065ND | SILICON CARBIDE SCHOTTKY DIODE SiC06A065ND
SILICON CARBIDE SCHOTTKY DIODE
Voltage
650 V
Current
6A
Features
Temperature Independent Switching Behavior Low Conduction and Switching Loss High Surge Current Capability Positive Temperature Coefficient on VF Fast Reverse Recovery
Mechanical Data
Case: M Pan Jit International diode | |
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Número de pieza | Descripción | Fabricantes | |
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