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Datasheet SIC9923L Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | SIC9923L | North America SCR dimming LED constant current driver chip 深圳深爱半导体股份有限公司 Shenzhen SI Semiconductors Co., LTD.
北美地区可控硅调光 LED 恒流驱动芯片
产品规格书
Product Specification
SIC9922L/SIC9923L
概述:
SIC9922L/SIC9923L是一款高效率支持可控硅调光的LED驱动芯片。芯片工作在电感电流� | SI Semiconductors | led |
SIC Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | SIC02A065NS | SILICON CARBIDE SCHOTTKY DIODE SiC02A065NS
SILICON CARBIDE SCHOTTKY DIODE
Voltage
650 V
Current
2A
Features
Temperature Independent Switching Behavior Low Conduction and Switching Loss High Surge Current Capability Positive Temperature Coefficient on VF Fast Reverse Recovery
Mechanical Data
Case: M Pan Jit International diode | | |
2 | SIC02A065T | SILICON CARBIDE SCHOTTKY DIODE SiC02A065T
SILICON CARBIDE SCHOTTKY DIODE
Voltage
650 V
Current
2A
Features
Temperature Independent Switching Behavior Low Conduction and Switching Loss High Surge Current Capability Positive Temperature Coefficient on VF Fast Reverse Recovery
Mechanical Data
Case: Mo Pan Jit International diode | | |
3 | SIC02A120S | SILICON CARBIDE SCHOTTKY DIODE SiC02A120S
SILICON CARBIDE SCHOTTKY DIODE
Voltage 1200 V Current
2A
Features
Temperature Independent Switching Behavior Low Conduction and Switching Loss High Surge Current Capability Positive Temperature Coefficient on VF Fast Reverse Recovery
Mechanical Data
Case: Mol Pan Jit International diode | | |
4 | SIC04A065ND | SILICON CARBIDE SCHOTTKY DIODE SiC04A065ND
SILICON CARBIDE SCHOTTKY DIODE
Voltage
650 V
Current
4A
Features
Temperature Independent Switching Behavior Low Conduction and Switching Loss High Surge Current Capability Positive Temperature Coefficient on VF Fast Reverse Recovery
Mechanical Data
Case: M Pan Jit International diode | | |
5 | SIC04A065NS | SILICON CARBIDE SCHOTTKY DIODE SiC04A065NS
SILICON CARBIDE SCHOTTKY DIODE
Voltage
650 V
Current
4A
Features
Temperature Independent Switching Behavior Low Conduction and Switching Loss High Surge Current Capability Positive Temperature Coefficient on VF Fast Reverse Recovery
Mechanical Data
Case: M Pan Jit International diode | | |
6 | SIC04A065T | SILICON CARBIDE SCHOTTKY DIODE SiC04A065T
SILICON CARBIDE SCHOTTKY DIODE
Voltage
650 V
Current
4A
Features
Temperature Independent Switching Behavior Low Conduction and Switching Loss High Surge Current Capability Positive Temperature Coefficient on VF Fast Reverse Recovery
Mechanical Data
Case: Mo Pan Jit International diode | | |
7 | SiC06A065ND | SILICON CARBIDE SCHOTTKY DIODE SiC06A065ND
SILICON CARBIDE SCHOTTKY DIODE
Voltage
650 V
Current
6A
Features
Temperature Independent Switching Behavior Low Conduction and Switching Loss High Surge Current Capability Positive Temperature Coefficient on VF Fast Reverse Recovery
Mechanical Data
Case: M Pan Jit International diode | |
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Número de pieza | Descripción | Fabricantes | |
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