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Datasheet SIC842160 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1SIC842160Solid State Relay

S/CEL/SIC842160/C/23/10/2006 Nouveau Relais Statique compact Série au pas de 22,5mm New Solid State Relay compact size pitch 22,5mm page 1 /2 F/GB SIC842160 4-30VDC control 16A/230VAC output • Sortie AC synchrone : 12-280VAC-25A. (16A limité par la connectique) • Protection IP20. • LED de
celduc-relais
celduc-relais		relay


SIC Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1SIC02A065NSSILICON CARBIDE SCHOTTKY DIODE

SiC02A065NS SILICON CARBIDE SCHOTTKY DIODE Voltage 650 V Current 2A Features  Temperature Independent Switching Behavior  Low Conduction and Switching Loss  High Surge Current Capability  Positive Temperature Coefficient on VF  Fast Reverse Recovery Mechanical Data  Case: M
Pan Jit International
Pan Jit International		diode
2SIC02A065TSILICON CARBIDE SCHOTTKY DIODE

SiC02A065T SILICON CARBIDE SCHOTTKY DIODE Voltage 650 V Current 2A Features  Temperature Independent Switching Behavior  Low Conduction and Switching Loss  High Surge Current Capability  Positive Temperature Coefficient on VF  Fast Reverse Recovery Mechanical Data  Case: Mo
Pan Jit International
Pan Jit International		diode
3SIC02A120SSILICON CARBIDE SCHOTTKY DIODE

SiC02A120S SILICON CARBIDE SCHOTTKY DIODE Voltage 1200 V Current 2A Features  Temperature Independent Switching Behavior  Low Conduction and Switching Loss  High Surge Current Capability  Positive Temperature Coefficient on VF  Fast Reverse Recovery Mechanical Data  Case: Mol
Pan Jit International
Pan Jit International		diode
4SIC04A065NDSILICON CARBIDE SCHOTTKY DIODE

SiC04A065ND SILICON CARBIDE SCHOTTKY DIODE Voltage 650 V Current 4A Features  Temperature Independent Switching Behavior  Low Conduction and Switching Loss  High Surge Current Capability  Positive Temperature Coefficient on VF  Fast Reverse Recovery Mechanical Data  Case: M
Pan Jit International
Pan Jit International		diode
5SIC04A065NSSILICON CARBIDE SCHOTTKY DIODE

SiC04A065NS SILICON CARBIDE SCHOTTKY DIODE Voltage 650 V Current 4A Features  Temperature Independent Switching Behavior  Low Conduction and Switching Loss  High Surge Current Capability  Positive Temperature Coefficient on VF  Fast Reverse Recovery Mechanical Data  Case: M
Pan Jit International
Pan Jit International		diode
6SIC04A065TSILICON CARBIDE SCHOTTKY DIODE

SiC04A065T SILICON CARBIDE SCHOTTKY DIODE Voltage 650 V Current 4A Features  Temperature Independent Switching Behavior  Low Conduction and Switching Loss  High Surge Current Capability  Positive Temperature Coefficient on VF  Fast Reverse Recovery Mechanical Data  Case: Mo
Pan Jit International
Pan Jit International		diode
7SiC06A065NDSILICON CARBIDE SCHOTTKY DIODE

SiC06A065ND SILICON CARBIDE SCHOTTKY DIODE Voltage 650 V Current 6A Features  Temperature Independent Switching Behavior  Low Conduction and Switching Loss  High Surge Current Capability  Positive Temperature Coefficient on VF  Fast Reverse Recovery Mechanical Data  Case: M
Pan Jit International
Pan Jit International		diode



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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