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Datasheet SIC762CD Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | SIC762CD | Integrated DrMOS Power Stage SiC762CD
Vishay Siliconix
Integrated DrMOS Power Stage
DESCRIPTION
The SiC762CD is an integrated solution that contains PWM optimized n-channel MOSFETs (high side and low side) and a full featured MOSFET driver IC. The device complies with the Intel DrMOS standard for desktop and server Vcore power | Vishay Siliconix | data |
SIC Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | SIC02A065NS | SILICON CARBIDE SCHOTTKY DIODE SiC02A065NS
SILICON CARBIDE SCHOTTKY DIODE
Voltage
650 V
Current
2A
Features
Temperature Independent Switching Behavior Low Conduction and Switching Loss High Surge Current Capability Positive Temperature Coefficient on VF Fast Reverse Recovery
Mechanical Data
Case: M Pan Jit International diode | | |
2 | SIC02A065T | SILICON CARBIDE SCHOTTKY DIODE SiC02A065T
SILICON CARBIDE SCHOTTKY DIODE
Voltage
650 V
Current
2A
Features
Temperature Independent Switching Behavior Low Conduction and Switching Loss High Surge Current Capability Positive Temperature Coefficient on VF Fast Reverse Recovery
Mechanical Data
Case: Mo Pan Jit International diode | | |
3 | SIC02A120S | SILICON CARBIDE SCHOTTKY DIODE SiC02A120S
SILICON CARBIDE SCHOTTKY DIODE
Voltage 1200 V Current
2A
Features
Temperature Independent Switching Behavior Low Conduction and Switching Loss High Surge Current Capability Positive Temperature Coefficient on VF Fast Reverse Recovery
Mechanical Data
Case: Mol Pan Jit International diode | | |
4 | SIC04A065ND | SILICON CARBIDE SCHOTTKY DIODE SiC04A065ND
SILICON CARBIDE SCHOTTKY DIODE
Voltage
650 V
Current
4A
Features
Temperature Independent Switching Behavior Low Conduction and Switching Loss High Surge Current Capability Positive Temperature Coefficient on VF Fast Reverse Recovery
Mechanical Data
Case: M Pan Jit International diode | | |
5 | SIC04A065NS | SILICON CARBIDE SCHOTTKY DIODE SiC04A065NS
SILICON CARBIDE SCHOTTKY DIODE
Voltage
650 V
Current
4A
Features
Temperature Independent Switching Behavior Low Conduction and Switching Loss High Surge Current Capability Positive Temperature Coefficient on VF Fast Reverse Recovery
Mechanical Data
Case: M Pan Jit International diode | | |
6 | SIC04A065T | SILICON CARBIDE SCHOTTKY DIODE SiC04A065T
SILICON CARBIDE SCHOTTKY DIODE
Voltage
650 V
Current
4A
Features
Temperature Independent Switching Behavior Low Conduction and Switching Loss High Surge Current Capability Positive Temperature Coefficient on VF Fast Reverse Recovery
Mechanical Data
Case: Mo Pan Jit International diode | | |
7 | SiC06A065ND | SILICON CARBIDE SCHOTTKY DIODE SiC06A065ND
SILICON CARBIDE SCHOTTKY DIODE
Voltage
650 V
Current
6A
Features
Temperature Independent Switching Behavior Low Conduction and Switching Loss High Surge Current Capability Positive Temperature Coefficient on VF Fast Reverse Recovery
Mechanical Data
Case: M Pan Jit International diode | |
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Número de pieza | Descripción | Fabricantes | |
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