|
|
Datasheet SI6463DQ Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | SI6463DQ | P-Channel 2.5V Specified PowerTrench MOSFET Si6463DQ
April 2001
Si6463DQ
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of ga |
Fairchild Semiconductor |
SI646 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
SI6467DQ | P-Channel 1.8V Specified PowerTrench MOSFET |
Fairchild Semiconductor |
|
SI6465DQ | P-Channel 1.8-V (G-S) MOSFET |
Vishay |
|
SI6467BDQ | P-Channel 1.8-V (G-S) MOSFET |
Vishay Siliconix |
Esta página es del resultado de búsqueda del SI6463DQ. Si pulsa el resultado de búsqueda de SI6463DQ se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |