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Datasheet SHF1101 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | SHF1101 | HYPER FAST RECOVERY RECTIFIER www.DataSheet.co.kr
REVERSE RECOVERY IN 5
nsec FLAT
1 Amp ▪ 100 - 200 Volts ▪ 5 nsec ▪ Hyper Fast Recovery Rectifier
Solid State Devices, Inc. (SSDI) announces the fastest, most rugged rectifier diodes on the market, the SHF1101 - SHF1201 Series. These diodes are more reliable than the 1N66 | SSDI | rectifier |
2 | SHF1101SM | HYPER FAST RECTIFIER www.DataSheet.co.kr
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com
SHF1100SM thru SHF1103SM
1 AMP 50–300 Volts 35 nsec HYPER FAST RECTIFIER
Features:
• • • • • • • • Hyper F | SSDI | rectifier |
SHF Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | SHF-0186 | DC-12 GHz/ 0.5 Watt AlGaAs/GaAs HFET Preliminary Preliminary
Product Description
Stanford Microdevices’ SHF-0186 is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added efficiency and ETC data | | |
2 | SHF-0186K | DC-3 GHz/ 0.5 Watt AlGaAs/GaAs HFET Preliminary Preliminary
Product Description
Stanford Microdevices’ SHF-0186K is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added efficiency an ETC data | | |
3 | SHF-0189 | GaAs HFET Product Description
Sirenza Microdevices’ SHF-0189 is a high performance AlGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearit Sirenza Microdevices data | | |
4 | SHF-0189Z | GaAs HFET Product Description
Sirenza Microdevices’ SHF-0189 is a high performance AlGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearit Sirenza Microdevices data | | |
5 | SHF-0289 | DC-3 GHz/ 1.0 Watt GaAs HFET Product Description
Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added efficiency and improved linearit ETC data | | |
6 | SHF-0289Z | GaAs HFET Product Description
Sirenza Microdevices’ SHF-0289 is a high performance AlGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearit Sirenza Microdevices data | | |
7 | SHF-0589 | 0.05-3 GHz/ 2 Watt GaAs HFET Product Description
Sirenza Microdevices’ SHF-0589 is a high performance AlGaAs/ GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved lineari ETC data | |
Esta página es del resultado de búsqueda del SHF1101. Si pulsa el resultado de búsqueda de SHF1101 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
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