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Datasheet S9014 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1S9014Pre-Amplifier / Low Level & Low Noise

SS9014 SS9014 Pre-Amplifier, Low Level & Low Noise • High total power dissipation. (PT=450mW) • High hFE and good linearity • Complementary to SS9015 1 TO-92 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VC
Fairchild Semiconductor
Fairchild Semiconductor
amplifier
2S9014NPN Silicon Transistor

7 Semiconductor STS9014 NPN Silicon Transistor Description • General purpose application • Switching application Features • Excellent hFE linearity : hFE(IC=0.1 mA) / hFE(IC=2 mA) = 0.95(Typ.) • Low noise : NF=10dB(Max.) at f=1KHz • Complementary pair with STS9015 Ordering Information
AUK corp
AUK corp
transistor
3S9014NPN General Purpose Transistors

S9014 NPN General Purpose Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation TA=25 C Junction Temperature Storage,
Weitron Technology
Weitron Technology
transistor
4S9014Silicon Epitaxial Planar Transistor

BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z z z Complementary To S9015. Excellent HFE Linearity. Power dissipation.(PC=0.2W) Production specification S9014 Pb Lead-free APPLICATIONS z Per-Amplifier low level & low noise. SOT-23 ORDERING INFORMATION T
Galaxy Semi
Galaxy Semi
transistor
5S9014Silicon Epitaxial Planar Transistor

BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z z z Complementary To S9015. Excellent HFE Linearity. Power dissipation.(PC=0.2W) Production specification S9014 Pb Lead-free APPLICATIONS z Per-Amplifier low level & low noise. SOT-23 ORDERING INFORMATION T
BL
BL
transistor


S90 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
1S9004P2CT30A SCHOTTKY BARRIER RECTIFIER

S9004P2CT 30A SCHOTTKY BARRIER RECTIFIER Features · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverter
Diodes Incorporated
Diodes Incorporated
datasheet S9004P2CT pdf
2S9005P2CT20A SCHOTTKY BARRIER RECTIFIER

S9005P2CT 20A SCHOTTKY BARRIER RECTIFIER Features · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverter
Diodes Incorporated
Diodes Incorporated
datasheet S9005P2CT pdf
3S9011NPN Transistor

RoHS S9011 S9011 F EATURE Pow er dissipation P CM: TRANSISTOR (NPN) TO-92 1 . EMITTER 2. BASE 0 .31 W (Tamb=25℃) 3. COLLECTOR Co llector current I CM: 0 .03 A C ollector-base voltage V (BR)CBO: 30 V Operating and storage junction temperature range Tj, Tstg: - 55℃ to +150℃ E LECTRICAL C
WEJ
WEJ
datasheet S9011 pdf
4S9011NPN Silicon Epitaxial Planar Transistor

BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor FEATURES z Collec tor Current.(IC= 30mA) z Power dissipation.(PC=200mW) Production specification S 9011 Pb Lead-free APPLICATIONS z AM converter, AM/FM if amplifier general purpose transistor. ORDERING INFORMATION Type No. S 9011 M
BL
BL
datasheet S9011 pdf
5S9012TO-92 Plastic-Encapsulate Transistors

ETC
ETC
datasheet S9012 pdf
6S9012PNP General Purpose Transistors

S9012 PNP General Purpose Transistors P b Lead(Pb)-Free TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation TA =25 C Junction T
Weitron Technology
Weitron Technology
datasheet S9012 pdf
7S9012PNP Silicon Epitaxial Planar Transistor

BL Galaxy Electrical PNP Silicon Epitaxial Planar Transistor FEATURES z z z High Collector Current.(IC= -500mA) Complementary To S9013. Excellent HFE Linearity. Production specification S9012 Pb Lead-free APPLICATIONS z High Collector Current. SOT-23 ORDERING INFORMATION
BL
BL
datasheet S9012 pdf



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


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