Datasheet S9014 Equivalent ( PDF )

SS9014 SS9014 Pre-Amplifier, Low Level & Low Noise High total power dissipation. (PT=450mW) High hFE and good linearity Complementary to SS9015 1 TO-92 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Co

7 Semiconductor STS9014 NPN Silicon Transistor Description General purpose application Switching application Features Excellent hFE linearity : hFE(IC=0.1 mA) , hFE(IC=2 mA) = 0.95(Typ.) Low noise : NF=10dB(Max.) at f=1KH- Complementary pair with STS9015 Ordering Information Type NO. STS9014 Marking STS9014 Package Code TO-92 Outline Dimensions 3.45±0.1 4.5±0.1 2.25±0.1 unit : mm

S9014 NPN General Purpose Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation TA=25 C Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg Value 45 50 5.0 100 0.4 150 -55 to +150 Unit Vdc Vdc Vdc mAdc W C C E

BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES - - - Complementary To S9015. Excellent HFE Linearity. Power dissipation.(PC=0.2W) Production specification S9014 Pb Lead-free APPLICATIONS - Per-Amplifier low level & low noise. SOT-23 ORDERING INFORMATION Type No. S9014 Marking J6 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEB

BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES - - - Complementary To S9015. Excellent HFE Linearity. Power dissipation.(PC=0.2W) Production specification S9014 Pb Lead-free APPLICATIONS - Per-Amplifier low level & low noise. SOT-23 ORDERING INFORMATION Type No. S9014 Marking J6 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEB

Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop.

Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection

1. Power dissipation: PCM: 0.31 W (Tamb=25℃) 2. Collector current: ICM: 0.03 A 3. Collector-base voltage : V(BR)CBO: 30 V

BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor FEATURES - Collec tor Current.(IC= 30mA） - Power dissipation.(PC=200mW) Production specification S 9011 Pb Lead-free APPLICATIONS - AM converter, AM, FM if amplifier general purpose transistor. ORDERING INFORMATION Type No. S 9011

S9012 PNP General Purpose Transistors P b Lead(Pb)-Free TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation TA =25 C Junction Temperature Storage,

BL Galaxy Electrical PNP Silicon Epitaxial Planar Transistor FEATURES - - - High Collector Current.(IC= -500mA） Complementary To S9013. Excellent HFE Linearity. Production specification S9012 Pb Lead-free APPLICATIONS - High Collector Current. SOT-23 ORDERING INFORMATION Type No. S9012 Mar