Datasheet RQA0009TXDQS Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	RQA0009TXDQS	Silicon N-Channel MOS FET RQA0009TXDQS Silicon N-Channel MOS FET REJ03G1520-0100 Rev.1.00 Jul 04, 2007 Features • High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz) • Compact package capable of surface mounting • Electrostatic Di	Renesas Technology	data

RQA Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	RQA0001DNS	Silicon N-Channel MOS FET RQA0001DNS Silicon N-Channel MOS FET REJ03G0582-0300 Rev.3.00 Oct 11, 2006 Features • High Output Power, High Gain, High Efficiency Pout = +33 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz) • Small Outline Package (WSON0303-2: 3.0 × 3.0 × 0.8mm) Outline RENESAS Packag	Renesas Technology	data
2	RQA0002DNS	Silicon N-Channel MOS FET RQA0002DNS Silicon N-Channel MOS FET REJ03G0583-0301 Rev.3.01 Nov 21, 2007 Features • High output power, High gain, High efficiency Pout = +39.6 dBm, Linear gain = 20 dB, PAE = 68% (f = 520 MHz) • Small outline package (WSON0504-2: 5.0 × 4.0 × 0.8 mm) Outline RENESAS Pac	Renesas Technology	data
3	RQA0003DNS	Silicon N-Channel MOS FET RQA0003DNS Silicon N-Channel MOS FET REJ03G0584-0300 Rev.3.00 Oct 12, 2006 Features • High Output Power, High Gain, High Efficiency Pout = +36 dBm, Linear Gain = 19 dB, PAE = 65% (f = 520 MHz) • Small Outline Package (WSON0303-2: 3.0 × 3.0 × 0.8mm) Outline RENESAS Packag	Renesas Technology	data
4	RQA0004LXAQS	Silicon N-Channel MOS FET RQA0004LXAQS Silicon N-Channel MOS FET REJ03G1567-0100 Rev.1.00 Jul 04, 2007 Features • High Output Power, High Gain, High Efficiency Pout = +29 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz) • Compact package capable of surface mounting Outline RENESAS Package code: PL	Renesas Technology	data
5	RQA0004PXDQS	Silicon N-Channel MOS FET RQA0004PXDQS Silicon N-Channel MOS FET REJ03G1489-0100 Rev.1.00 Dec 12, 2006 Features • High Output Power, High Efficiency Pout = +29 dBm, PAE = 68% (f = 520 MHz) • Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-A (Package Name : UPAK	Renesas Technology	data
6	RQA0005MXAQS	Silicon N-Channel MOS FET RQA0005MXAQS Silicon N-Channel MOS FET REJ03G1568-0100 Rev.1.00 Jul 04, 2007 Features • High Output Power, High Gain, High Efficiency Pout = +33 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz) • Compact package capable of surface mounting Outline RENESAS Package code: PL	Renesas Technology	data
7	RQA0005QXDQS	Silicon N-Channel MOS FET RQA0005QXDQS Silicon N-Channel MOS FET REJ03G1325-0100 Rev.1.00 Oct 16, 2006 Features • High Output Power, High Gain, High Efficiency Pout = +33 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz) • Compact package capable of surface mounting Outline RENESAS Package code:�	Renesas Technology	data

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Número de pieza	Descripción	Fabricantes	PDF
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