Datasheet RP1H Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
3	RP1H	Ultra-Fast-Recovery Rectifier Diodes Ultra-Fast-Recovery Rectifier Diodes Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A) 50Hz Half-cycle Sinewave Single Shot Electrical Characteristics (Ta = 25°C) Tstg (°C) VF (V) max IF (A) IR (µA) IR (H) (µA) Others Tj (°C) t rr (ns) IF /IRP (mA) t rr (ns) I	Sanken electric
2	RP1H	Ultra-Fast-Recovery Rectifier Diodes Ultra-Fast-Recovery Rectifier Diodes Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A) 50Hz Half-cycle Sinewave Single Shot Electrical Characteristics (Ta = 25°C) Tstg (°C) VF (V) max IF (A) IR (µA) IR (H) (µA) Others Tj (°C) t rr (ns) IF /IRP (mA) t rr (ns) I	Sanken electric
1	RP1H065SP	4V Drive Pch MOSFET Data Sheet 4V Drive Pch MOSFET RP1H065SP  Structure Silicon P-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (MPT6).  Dimensions (Unit : mm) MPT6 (Single) (6) (5) (4) (1) (2) (3)  Application Switching  Packaging spec	ROHM Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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