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Datasheet RJP4002ANS Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1RJP4002ANSNch IGBT

RJP4002ANS Nch IGBT for Strobe Flash REJ03G1472-0100 Rev.1.00 Oct 13, 2006 Features • • • • Ultra small surface mount package (VSON-8) VCES: 400 V ICM: 150 A Drive voltage: 2.5 V Outline RENESAS Package code: PVSN0008JA-A (Package name: VSON-8) 5 8 4 1 1 2 3 4 8 7 6 5 1, 2 : 3: E
Renesas Technology
Renesas Technology
igbt


RJP Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
1RJP020N06Drive Nch MOS FET

RJP020N06 Transistors 2.5V Drive Nch MOS FET RJP020N06 zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm) MPT3 4.5 1.6 0.5 1.5 zFeatures 1) Low On-resistance. 2) Low voltage drive (2.5V drive). (1) (2) (3) 1.0 2.5 4.0 0.4 0.4 1.5 0.5 1.5 3.0 0.4
ROHM Semiconductor
ROHM Semiconductor
datasheet RJP020N06 pdf
2RJP020N06FRAPower MOSFET, Transistor

RJP020N06FRA   Nch 60V 2A Middle Power MOSFET VDSS RDS(on)(Max.) ID PD 60V 240mΩ ±2A 2W lFeatures 1) Low on-resistance 2) Low voltage drive(2.5V drive) 3) AEC-Q101 Qualified lOutline SOT-89 MPT3            lInner circuit    Datasheet   lPackaging specifications Pack
ROHM Semiconductor
ROHM Semiconductor
datasheet RJP020N06FRA pdf
3RJP1CS03DWAIGBT, Insulated Gate Bipolar Transistor

Preliminary Datasheet RJP1CS03DWT/RJP1CS03DWA 1250V - 30A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C)  High speed switching  Short circuit withstands time (10 s min.) R07DS0826EJ0001 Rev
Renesas
Renesas
datasheet RJP1CS03DWA pdf
4RJP1CS03DWTIGBT, Insulated Gate Bipolar Transistor

Preliminary Datasheet RJP1CS03DWT/RJP1CS03DWA 1250V - 30A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C)  High speed switching  Short circuit withstands time (10 s min.) R07DS0826EJ0001 Rev
Renesas
Renesas
datasheet RJP1CS03DWT pdf
5RJP1CS04DWAIGBT, Insulated Gate Bipolar Transistor

Preliminary Datasheet RJP1CS04DWT/RJP1CS04DWA 1250V - 50A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C)  High speed switching  Short circuit withstands time (10 s min.) R07DS0827EJ0004 Rev
Renesas
Renesas
datasheet RJP1CS04DWA pdf
6RJP1CS04DWTIGBT, Insulated Gate Bipolar Transistor

Preliminary Datasheet RJP1CS04DWT/RJP1CS04DWA 1250V - 50A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C)  High speed switching  Short circuit withstands time (10 s min.) R07DS0827EJ0004 Rev
Renesas
Renesas
datasheet RJP1CS04DWT pdf
7RJP1CS05DWAIGBT, Insulated Gate Bipolar Transistor

Preliminary Datasheet RJP1CS05DWT/RJP1CS05DWA 1250V - 75A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 75 A, VGE = 15 V, Ta = 25C)  High speed switching  Short circuit withstands time (10 s min.) R07DS0828EJ0001 Rev
Renesas
Renesas
datasheet RJP1CS05DWA pdf



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SPS122

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