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Datasheet RD04HMS2 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | RD04HMS2 | Silicon MOSFET Power Transistor < Silicon RF Power MOS FET (Discrete) >
RD04HMS2
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W
DESCRIPTION
RD04HMS2 is MOS FET type transistor specifically OUTLINE DRAWING designed for VHF/UHF/890-950MHz RF power 6.0+/-0.15 amplifiers applications.
4.9+/-0.15
0.2+/-0.05
1
|  Mitsubishi Electric Semiconductor | mosfet |
RD0 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | RD00HHS1 | RoHS Compliance MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD00HHS1
4.4+/-0.1 1.6+/-0.1 LOT No. 3.9+/-0.3 3
1.5+/-0.1
0. 1
RoHS Compliance, DESCRIPTION
Silicon MOSFET Power Transistor 30MHz,0.3W
OUTLINE DRAWING
1.5+/-0.1
RD00HHS1 is a MOS FET type transistor specific  Mitsubishi Electric data | | |
| 2 | RD00HVS1 | RoHS Compliance MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD00HVS1
4.4+/-0.1 1.6+/-0.1 LOT No.
3.9+/-0.3
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W DESCRIPTION
RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers appl Mitsubishi Electric data | | |
| 3 | RD0106T | High-Speed Switching Diode www.DataSheet.co.kr
Ordering number : ENA1704
RD0106T
SANYO Semiconductors
DATA SHEET
RD0106T
Features
• • • • •
Diffused Junction Silicon Diode
Low VF • High-Speed Switching Diode
High breakdown voltage (VRRM=600V). Fast reverse recovery time. Low forward voltage (VF max=1.3V).  Sanyo Semicon Device diode | | |
| 4 | RD01MUS1 | Silicon MOSFET Power Transistor
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD01MUS1
4.4+/-0.1 1.6+/-0.1 LOT No.
3.9+/-0.3
RoHS Compliance, DESCRIPTION
Silicon MOSFET Power Transistor 520MHz,1W
OUTLINE DRAWING
1.5+/-0.1
RD01MUS1 is a MOS FET type transistor speci Mitsubishi Electric mosfet | | |
| 5 | RD01MUS2 | Silicon MOSFET Power Transistor
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD01MUS2
4.4+/-0.1 1.6+/-0.1 LOT No.
3.9+/-0.3
RoHS Compliance, DESCRIPTION
Silicon MOSFET Power Transistor 520MHz,1W
OUTLINE DRAWING
1.5+/-0.1
RD01MUS2 is a MOS FET type transistor speci Mitsubishi Electric mosfet | | |
| 6 | RD01MUS2B | Silicon MOSFET Power Transistor < Silicon RF Power MOS FET (Discrete) >
RD01MUS2B
RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device has an internal monolithic zener diode from gate Mitsubishi Electric Semiconductor mosfet | | |
| 7 | RD02MUS1 | Silicon MOSFET Power Transistor
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD02MUS1
0.2+/-0.05
(0.22) (0.22) (0.25)
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
DESCRIPTION
RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UH Mitsubishi Electric mosfet | |
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