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Datasheet R60IFXXXX Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1R60IFxxxx(R60 Series) Metallized Polyester Film Capacitor

Loose Fig.1 Taped Fig. 2 METALLIZED POLYESTER FILM CAPACITOR D.C. MULTIPURPOSE APPLICATIONS MKT Series R60 Typical applications: blocking, coupling, decoupling, by-passing, interference suppression in low voltage applications (i.e.: AUTOMOTIVE). PRODUCT CODE: R60 Note: Spec
ETC
ETC
capacitor


R60 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1R600General Purpose Rectifier (200-300 Amperes Average 1400-2600 Volts)

Powerex Power Semiconductors
Powerex Power Semiconductors
rectifier
2R6000F0.2mA Fast Recovery High Voltage Rectifier 3500 - 6000 Volts

MCC Features • • • • AVALANCHE OPERATION UL 94V0 FLAME RETARDANT EPOXY MOLDING COMPOND BEVELED ROUND CHIP LOW COST R3500F THRU R6000F 0.2mA Fast Recovery High Voltage Rectifier 3500 - 6000 Volts DO-15 Maximum DC Blocking Voltage D • • Maximum Ratings Operating Temperature -55 °C to +
Micro Commercial Components
Micro Commercial Components
rectifier
3R6004CND10V Drive Nch MOSFET

Data Sheet 10V Drive Nch MOSFET R6004CND  Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA. 4) Drive circuits can be simple. 5) Parallel use is easy.  Dimensions (Unit : mm) CPT3 (SC-63) 6.5 5.1 2.3 0.5 0.9 5.5 1.5 (1) G
ROHM Semiconductor
ROHM Semiconductor
mosfet
4R6004ENDNch 600V 4A Power MOSFET

R6004END   Nch 600V 4A Power MOSFET    Datasheet VDSS 600V lOutline TO-252   RDS(on)(Max.) 0.98Ω SC-63 ID ±4.0A CPT3 PD lFeatures 58W          lInner circuit 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to   be �
ROHM Semiconductor
ROHM Semiconductor
mosfet
5R6004ENXNch 600V 4A Power MOSFET

R6004ENX Nch 600V 4A Power MOSFET Data Sheet VDSS RDS(on) (Max.) ID PD lFeatures 1) Low on-resistance. 600V 980mW 4A 40W lOutline TO-220FM lInner circuit (1) (2) (3) 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. 5) Parallel us
ROHM Semiconductor
ROHM Semiconductor
mosfet
6R6004KNDNch 600V 4A Power MOSFET

R6004KND   Nch 600V 4A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.98Ω ±4.0A 58W lFeatures 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant. lOutline TO-252 SC-63 CPT3          lInner circuit    Datas
ROHM Semiconductor
ROHM Semiconductor
mosfet
7R6004KNJNch 600V 4A Power MOSFET

R6004KNJ   Nch 600V 4A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.98Ω ±4.0A 58W lFeatures 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant lOutline TO-263 SC-83 LPT(S)          lInner circuit    Data
ROHM Semiconductor
ROHM Semiconductor
mosfet
8R6004KNXNch 600V 4A Power MOSFET

R6004KNX   Nch 600V 4A Power MOSFET    Datasheet VDSS RDS(on)(Max.) ID PD 600V 0.98Ω ±4.0A 40W lFeatures 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant lOutline TO-220FM          lInner circuit  
ROHM Semiconductor
ROHM Semiconductor
mosfet
9R6006ANDNch 600V 6A Power MOSFET

R6006AND Nch 600V 6A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 600V 1.2W 6A 40W lOutline CPT3 (SC-63) (SOT-428) (1) (2) (3) lFeatures 1) Low on-resistance. lInner circuit 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4)
ROHM Semiconductor
ROHM Semiconductor
mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


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