Datasheet PZTA64 Equivalent ( PDF ) - Transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors PZTA64 TRANSISTOR (PNP) FEATURES Low Voltage and High Current High Current Gain Applications SOT-223 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage -30 VCEO Collector-Emitter Voltage -30 VEBO Emitter-Base V

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 PZTA64 PNP Darlington transistor Product speci cation Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 20 Philips Semiconductors Product speci cation PNP Darlington transistor FEATURES High current (max. 500 mA) Low voltage (max. 30 V). APPLICATIONS Preamplifiers requiring high input impedance. DES

MPSA64 , MMBTA64 , PZTA64 Discrete POWER & Signal Technologies MPSA64 MMBTA64 C PZTA64 C E C B E C B TO-92 E SOT-23 Mark: 2V B SOT-223 PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol VCES VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Ba

PNP Silicon Darlington Transistors PZTA 63 PZTA 64 For general AF applications q High collector current q High current gain q Complementary types: PZTA 13, PZTA 14 (NPN) q Type PZTA 63 PZTA 64 Marking PZTA 63 PZTA 64 Ordering Code (tape and reel) Q62702-Z2031 Q62702-Z2032 Pin Configuration 1 2 3 4 B C E C Package1) SOT-223 Maximum Ratings Parameter Collector-emitter voltage Collector-base

MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Small Signal Darlington Transistor This PNP small-signal darlington transistor is designed for use in preamplifiers input applications or wherever it is necessary to have a high input impedance. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. High fT : 125 MH- Minimum The SOT-223 Package can b