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Datasheet PTFB211501E Equivalent ( PDF ) |
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1 | PTFB211501E | Thermally-Enhanced High Power RF LDMOS FETs PTFB211501E PTFB211501F
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz
Description
The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 – 2170 frequency band. Features include I/O matchin |
Infineon |
PTFB2115 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
PTFB211503FL | Thermally-Enhanced High Power RF LDMOS FETs |
Infineon |
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PTFB211503EL | Thermally-Enhanced High Power RF LDMOS FETs |
Infineon |
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PTFB211501F | Thermally-Enhanced High Power RF LDMOS FETs |
Infineon |
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Número de pieza | Descripción | Fabricantes | |
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