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Datasheet PTF10015 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | PTF10015 | 50 Watts/ 300-960 MHz GOLDMOS Field Effect Transistor PTF 10015 50 Watts, 300–960 MHz GOLDMOS™ Field Effect Transistor
Description
The PTF 10015 is a 50 Watt LDMOS FET intended for large signal amplifier applications from 300 to 960 MHz. It operates at 55% efficiency and 13.0 dB of gain. Nitride surface passivation and full gold metallization are u | Ericsson | transistor |
PTF Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | PTF | Metal Film Resistors www.vishay.com
PTF
Vishay Dale
Metal Film Resistors, High Precision, High Stability
FEATURES
• Extremely low temperature coefficient of resistance
• Very low noise and voltage coefficient • Very good high frequency characteristics • Can replace wirewound bobbins • Proprietary epoxy coat Vishay data | | |
2 | PTF080101 | LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ Infineon Technologies AG transistor | | |
3 | PTF080101S | LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ Infineon Technologies AG transistor | | |
4 | PTF080451 | LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz PTF080451
LDMOS RF Power Field Effect Transistor 45 W, 869–960 MHz
Description
The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
Features
• • B Infineon Technologies AG transistor | | |
5 | PTF080451E | LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz PTF080451
LDMOS RF Power Field Effect Transistor 45 W, 869–960 MHz
Description
The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
Features
• • B Infineon Technologies AG transistor | | |
6 | PTF080601 | LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz Developmental PTF080601
LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz
Description
The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
Typ Infineon Technologies AG transistor | | |
7 | PTF080601A | LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz Developmental PTF080601
LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz
Description
The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
Typ Infineon Technologies AG transistor | |
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Número de pieza | Descripción | Fabricantes | |
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