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Datasheet PMZ950UPE Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | PMZ950UPE | P-channel Trench MOSFET PMZ950UPE
10 July 2014
SO
T8 83
20 V, P-channel Trench MOSFET
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features |  NXP Semiconductors | mosfet |
PMZ Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | PMZ1000UN | N-channel TrenchMOS standard level FET PMZ1000UN
N-channel TrenchMOS standard level FET
Rev. 2 — 17 September 2010
BOTTOM VIEW
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed NXP Semiconductors data | | |
| 2 | PMZ1200UPE | P-channel Trench MOSFET SOT883
PMZ1200UPE
30 V, P-channel Trench MOSFET
25 March 2015
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features a NXP Semiconductors mosfet | | |
| 3 | PMZ130UNE | N-channel Trench MOSFET SOT883
PMZ130UNE
20 V, N-channel Trench MOSFET
12 March 2015
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features an NXP Semiconductors mosfet | | |
| 4 | PMZ200UNE | N-channel Trench MOSFET SOT883
PMZ200UNE
30 V, N-channel Trench MOSFET
12 March 2015
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features an NXP Semiconductors mosfet | | |
| 5 | PMZ250UN | N-channel TrenchMOS extremely low level FET PMZ250UN
N-channel TrenchMOS extremely low level FET
Rev. 01 — 21 February 2008
BOTTOM VIEW
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
1.2 Features
I Profile 55 % lower NXP Semiconductors data | | |
| 6 | PMZ270XN | N-channel TrenchMOS extremely low level FET PMZ270XN
N-channel TrenchMOS extremely low level FET
Rev. 01. — 21 February 2008
BOTTOM VIEW
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
1.2 Features
I Profile 55 % lowe NXP Semiconductors data | | |
| 7 | PMZ290UNE | N-channel Trench MOSFET SOT883
PMZ290UNE
20 V, N-channel Trench MOSFET
14 May 2014
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and NXP Semiconductors mosfet | | |
| 8 | PMZ290UNE2 | N-channel Trench MOSFET SOT883
PMZ290UNE2
20 V, N-channel Trench MOSFET
24 March 2015
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features a NXP Semiconductors mosfet | | |
| 9 | PMZ320UPE | P-channel Trench MOSFET SOT883
PMZ320UPE
30 V, P-channel Trench MOSFET
24 March 2015
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features an NXP Semiconductors mosfet | |
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