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Datasheet PJSD05W Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1PJSD05WSINGLE LINE TVS DIODE

PJSD03W~PJSD36W SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS VOLTAGE FEATURES • 350 Watts peak pules power( tp=8/20μs) • Small package for use in portable electronics • Suitable replacement for MLV’S in ESD protection applications • Low clamping voltage and leakage curren
Pan Jit International
Pan Jit International		diode
2PJSD05WSINGLE LINE TVS DIODE

PJSD03W~PJSD36W SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS VOLTAGE FEATURES • 350 Watts peak pules power( tp=8/20μs) • Small package for use in portable electronics • Suitable replacement for MLV’S in ESD protection applications • Low clamping voltage and leakage curren
Pan Jit International
Pan Jit International		diode


PJS Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1PJS6400N-Channel Enhancement Mode MOSFET

PPJS6400 30V N-Channel Enhancement Mode MOSFET Voltage 30 V Current 6.4A Features  RDS(ON) , VGS@10V, [email protected]<37mΩ  RDS(ON) , [email protected], [email protected]<43mΩ  RDS(ON) , [email protected], [email protected]<59mΩ  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application,
Pan Jit International
Pan Jit International		mosfet
2PJS6401P-Channel Enhancement Mode MOSFET

PPJS6401 30V P-Channel Enhancement Mode MOSFET Voltage -30 V Current -4.6A Features  RDS(ON) , VGS@-10V, [email protected]<71mΩ  RDS(ON) , [email protected], [email protected]<81mΩ  RDS(ON) , [email protected], [email protected]<110mΩ  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Appl
Pan Jit International
Pan Jit International		mosfet
3PJS6404N-Channel Enhancement Mode MOSFET

PPJS6404 30V N-Channel Enhancement Mode MOSFET Voltage 30 V Current 6.8A Features  RDS(ON) , VGS@10V, [email protected]<32mΩ  RDS(ON) , [email protected],[email protected]<47mΩ  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc..  Lead free in compliance with EU
Pan Jit International
Pan Jit International		mosfet
4PJS6405P-Channel Enhancement Mode MOSFET

PPJS6405 30V P-Channel Enhancement Mode MOSFET Voltage -30 V Current -4.6A Features  RDS(ON) , VGS@-10V, [email protected]<72mΩ  RDS(ON) , [email protected], [email protected]<96mΩ  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc  Lead free in compliance w
Pan Jit International
Pan Jit International		mosfet
5PJS641420V N-Channel Enhancement Mode MOSFET

PPJS6414 20V N-Channel Enhancement Mode MOSFET Voltage 20 V Current 6.6A Features  RDS(ON) , [email protected], [email protected]<36mΩ  RDS(ON) , [email protected], [email protected]<52mΩ  RDS(ON) , [email protected], [email protected]<92mΩ  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application
Pan Jit International
Pan Jit International		mosfet
6PJS6415AEP-Channel Enhancement Mode MOSFET

PPJS6415AE 20V P-Channel Enhancement Mode MOSFET – ESD Protected Voltage -20 V Current -4.9A SOT-23 6L-1 Features  RDS(ON) , VGS@-10V, [email protected]<60mΩ  RDS(ON) , [email protected], [email protected]<70mΩ  RDS(ON) , [email protected], [email protected]<96mΩ  Advanced Trench Process Technology  Specially De
Pan Jit International
Pan Jit International		mosfet
7PJS641620V N-Channel Enhancement Mode MOSFET

PPJS6416 20V N-Channel Enhancement Mode MOSFET Voltage 20 V Current 7.4A Features  RDS(ON) , [email protected], [email protected]<27mΩ  RDS(ON) , [email protected], [email protected]<41mΩ  RDS(ON) , [email protected], [email protected]<85mΩ  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application
Pan Jit International
Pan Jit International		mosfet
8PJS6600Complementary Enhancement Mode MOSFET

PPJS6600 30V Complementary Enhancement Mode MOSFET – ESD Protected Voltage 30 / -30V Current 1.6 /-1.1A SOT-23 6L Features  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.  ESD Protected 2KV HBM  Lead free in compliance with EU RoHS 20
Pan Jit International
Pan Jit International		mosfet
9PJS6601Complementary Enhancement Mode MOSFET

PPJS6601 20V Complementary Enhancement Mode MOSFET Voltage 20 / -20V Current 4.1 /-3.1A SOT-23 6L Features  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.  Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compoun
Pan Jit International
Pan Jit International		mosfet



Esta página es del resultado de búsqueda del PJSD05W. Si pulsa el resultado de búsqueda de PJSD05W se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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