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Datasheet PBSS4350S Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | PBSS4350S | 50 V low VCEsat NPN transistor DISCRETE SEMICONDUCTORS
DATA SHEET
alfpage
M3D186
PBSS4350S 50 V low VCEsat NPN transistor
Product specification 2001 Nov 19
Philips Semiconductors
Product specification
50 V low VCEsat NPN transistor
FEATURES • High power dissipation (830 mW) • Ultra low collector-emitter saturation vol |
 NXP Semiconductors |
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| 2 | PBSS4350SPN | 2.7A NPN/PNP Low VCEsat (BISS) Transistor PBSS4350SPN
50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor
Rev. 01 — 5 April 2007
Product data sheet
1. Product profile
1.1 General description
NPN/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic p |
NXP Semiconductors |
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| 1 | PBSS4350SS | transistor PBSS4350SS
50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor
Rev. 01 — 3 April 2007
Product data sheet
1. Product profile
1.1 General description
NPN/NPN double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package.
Table 1. |
NXP Semiconductors |
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