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Datasheet P9NK50ZFP Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Comprar ahora |
1 | P9NK50ZFP | STP9NK50ZFP
STP9NK50Z - STP9NK50ZFP
STB9NK50Z
N-CHANNEL 500V - 0.72Ω - 7.2A TO-220, TO-220FP, D2PAK Zener-Protected SuperMESH™ Power MOSFET
TYPE
VDSS RDS(on)
ID
Pw
STP9NK50Z STP9NK50ZFP STB9NK50Z
500 V 500 V 500 V
< 0.85 Ω < 0.85 Ω < 0.85 Ω
7.2 A 7.2 A 7.2 A
110 W 30 W 110 W
s TYPICAL RDS(on) = 0.72 Ω s EXTREMELY HIGH dv, dt CAPABILITY s 100% AVALANCHE TESTED s GATE CHARGE MINIMIZED s
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![]() STMicroelectronics |
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P9N Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | P9N70 | SSFP9N70
SSFP9N70
StarMOST Power MOSFET
- Extremely high dv, dt capability - Low Gate Charge Qg results in
Simple Drive Requirement - 100% avalanche tested - Gate charge minimized - Very low intrinsic capacitances - Very good manufacturing repeatability
Description
StarMOS is a new generation of high voltag
| ![]() Good-Ark |
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2 | P9NB50FP | STP9NB50FP
N-CHANNEL 500V - 0.75 Ω - 8.6 A TO-220, TO-220FP PowerMesh™ MOSFET
TYPE STP9NB50 STP9NB50FP
s s s s s
STP9NB50 STP9NB50FP
VDSS 500 V 500 V
RDS(on) < 0.85 Ω < 0.85 Ω
ID 8.6 A 4.9 A
TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv, dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPA
| ![]() STMicroelectronics |
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3 | P9NB60FP | STP9NB60FP
®
STP9NB60 STP9NB60FP
N - CHANNEL 600V - 0.7Ω - 9A TO-220, TO220FP PowerMESH™ MOSFET
TYPE ST P9NB60 ST P9NB60FP
s s s s s
V DSS 600 V 600 V
R DS(on) < 0.8 Ω < 0.8 Ω
ID 9.0 A 9.0 A
TYPICAL RDS(on) = 0.7 Ω EXTREMELY HIGH dv, dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPAC
| ![]() ST Microelectronics |
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4 | P9NC60 | STP9NC60
N-CHANNEL 600V - 0.6Ω - 9A - TO-220, TO-220FP PowerMesh™II MOSFET
TYPE STP9NC60 STP9NC60FP
s s s s s
STP9NC60 STP9NC60FP
VDSS 600 V 600 V
RDS(on) < 0.75 Ω < 0.75 Ω
ID 9.0 A 9.0 A (*)
TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv, dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCH
| ![]() ST Microelectronics |
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5 | P9NC60FP | STP9NC60FP
®
STP9NC60 STP9NC60FP
N - CHANNEL 600V - 0.6Ω - 9A TO-220, TO-220FP PowerMESH™ ΙΙ MOSFET
T YPE
V DSS 600 V 600 V
R DS(on) < 0.75 Ω < 0.75 Ω
ID 9.0 A 5.2 A
STP9NC60 STP9NC60FP
ν ν ν ν ν
TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv, dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH
| ![]() STMicroelectronics |
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6 | P9NC65FP | STP9NC65FP
N-CHANNEL 650V - 0.75Ω - 8A TO-220, TO-220FP PowerMesh™II MOSFET
TYPE STP9NC65 STP9NC65FP
s s s s s
STP9NC65 STP9NC65FP
VDSS 650 V 650 V
RDS(on) < 0.90 Ω < 0.90 Ω
ID 8A 8A
TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv, dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE
| ![]() ST Microelectronics |
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7 | P9NK50Z | STP9NK50Z
STP9NK50Z - STP9NK50ZFP STB9NK50Z - STB9NK50Z-1
N-CHANNEL 500V - 0.72Ω - 7.2A TO-220, FP, D2PAK, I2PAK Zener-Protected SuperMESH™ MOSFET
TYPE STP9NK50Z STP9NK50ZFP STB9NK50Z STB9NK50Z-1
s s s s s s
VDSS 500 500 500 500 V V V V
RDS(on) < 0.85 Ω < 0.85 Ω < 0.85 Ω < 0.85 Ω
ID 7.2 A 7.2
| ![]() STMicroelectronics |
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Número de pieza | Descripción | Fabricantes | |
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