Datasheet P8010BD Equivalent ( PDF ) - Mosfet

NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P8010BD TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 85mΩ ID 15A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy MOSFET d

P8010BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 85mΩ @VGS = 10V ID 15A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Avalanche Current TC = 25 °C TC = 100 °C VGS ID IDM IAS ±20 15 9 35 1

P8008BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 80V 80mΩ @VGS = 10V ID 15A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 80 Gate-Source Voltage VGS ±25 Continuous Dra

P8008BDA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 80V 68mΩ @VGS = 10V ID 16A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 80 Gate-Source Voltage VGS ±25 Continuous Dr

P8008BV N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 80V 80mΩ @VGS = 10V ID 3A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 80 Gate-Source Voltage VGS ±25 Cont

P8008BVA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 80V 68mΩ @VGS = 10V ID 3.5A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 80 Gate-Source Voltage VGS ±25 Continuous Dr

P8008HV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 80V 80mΩ @VGS = 10V ID 4A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 80 Gate-Source Voltage VGS ±25 Continuous Dra

P8008HVA Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 80V 68mΩ @VGS = 10V ID 3.2A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 80 Gate-Source Voltage VGS ±25 Continuo

P800A - P800K PRV : 50 - 800 Volts Io : 8.0 Amperes FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb , RoHS Free SILICON RECTIFIER DIODES D6 0.360 (9.1) 0.340 (8.6) 1.00 (25.4) MIN. 0.360 (9.1) 0.340 (8