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Datasheet P4N Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | P4N05L | RFP4N05L RFP4N05L, RFP4N06L
Data Sheet
July 1999
File Number
2876.2
4A, 50V and 60V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs
The RFP4N05L and RFP4N06L are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regula |  Intersil Corporation | data |
| 2 | P4N60 | SSP4N60
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µ A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ.)
SSP4N60AS
BVDSS = 600 V RDS(on) |  Fairchild Semiconductor | data |
| 3 | P4N80E | MTP4N80E
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Designer's
TMOS E-FET .™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performa |  Motorola Semiconductors | data |
| 4 | P4NA40F1 | STP4NA40F1 STP4NA40 STP4NA40FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE STP4NA40 STP4NA40FI
s s s s s s s
V DSS 400 V 400 V
R DS( on) < 2Ω < 2Ω
ID 4A 2.8 A
TYPICAL RDS(on) = 1.7 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTR |  ST Microelectronics | data |
| 5 | P4NA60FI | STP4NA60FI
STP4NA60 STP4NA60FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE STP4NA60 STP4NA60FI
s s s s s s s
V DSS 600 V 600 V
R DS( on) < 2.2 Ω < 2.2 Ω
ID 4.3 A 2.7 A
TYPICAL RDS(on) = 1.85 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE A |  STMicroelectronics | data |
| 6 | P4NA80 | STP4NA80 N-Channel MOS Transistor
STP4NA80 STP4NA80FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE STP4NA80 STP4NA80FI
s s s s s s s
VDSS 800 V 800 V
R DS(on) <3Ω <3Ω
ID 4A 2.5 A
TYPICAL RDS(on) = 2.4 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA | ST Microelectronics | transistor |
| 7 | P4NA80FI | STP4NA80FI
STP4NA80 STP4NA80FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE STP4NA80 STP4NA80FI
s s s s s s s
V DSS 800 V 800 V
R DS( on) < 3Ω < 3Ω
ID 4A 2.5 A
TYPICAL RDS(on) = 2.4 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED R | ST Microelectronics | data |
| 8 | P4NB10 | STP4NB10
®
STP4NB100 STP4NB100FP
N - CHANNEL 1000V - 4Ω - 3.8A - TO-220/TO-220FP PowerMESH™ MOSFET
TYPE ST P4NB100 ST P4NB100FP
s s s s s
V DSS 1000 V 1000 V
R DS(on) < 4.4 Ω < 4.4 Ω
ID 3.8 A 3.8 A
TYPICAL RDS(on) = 4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TEST | ST Microelectronics | data |
| 9 | P4NB100 | STP4NB100
®
STP4NB100 STP4NB100FP
N - CHANNEL 1000V - 4Ω - 3.8A - TO-220/TO-220FP PowerMESH™ MOSFET
TYPE ST P4NB100 ST P4NB100FP
s s s s s
V DSS 1000 V 1000 V
R DS(on) < 4.4 Ω < 4.4 Ω
ID 3.8 A 3.8 A
TYPICAL RDS(on) = 4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TEST | ST Microelectronics | data |
P4N Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | P4N05L | RFP4N05L RFP4N05L, RFP4N06L
Data Sheet
July 1999
File Number
2876.2
4A, 50V and 60V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs
The RFP4N05L and RFP4N06L are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regula Intersil Corporation data | | |
| 2 | P4N60 | SSP4N60
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µ A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ.)
SSP4N60AS
BVDSS = 600 V RDS(on) Fairchild Semiconductor data | | |
| 3 | P4N80E | MTP4N80E
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Designer's
TMOS E-FET .™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performa Motorola Semiconductors data | | |
| 4 | P4NA40F1 | STP4NA40F1 STP4NA40 STP4NA40FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE STP4NA40 STP4NA40FI
s s s s s s s
V DSS 400 V 400 V
R DS( on) < 2Ω < 2Ω
ID 4A 2.8 A
TYPICAL RDS(on) = 1.7 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTR ST Microelectronics data | | |
| 5 | P4NA60FI | STP4NA60FI
STP4NA60 STP4NA60FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE STP4NA60 STP4NA60FI
s s s s s s s
V DSS 600 V 600 V
R DS( on) < 2.2 Ω < 2.2 Ω
ID 4.3 A 2.7 A
TYPICAL RDS(on) = 1.85 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE A STMicroelectronics data | | |
| 6 | P4NA80 | STP4NA80 N-Channel MOS Transistor
STP4NA80 STP4NA80FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE STP4NA80 STP4NA80FI
s s s s s s s
VDSS 800 V 800 V
R DS(on) <3Ω <3Ω
ID 4A 2.5 A
TYPICAL RDS(on) = 2.4 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA ST Microelectronics transistor | | |
| 7 | P4NA80FI | STP4NA80FI
STP4NA80 STP4NA80FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE STP4NA80 STP4NA80FI
s s s s s s s
V DSS 800 V 800 V
R DS( on) < 3Ω < 3Ω
ID 4A 2.5 A
TYPICAL RDS(on) = 2.4 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED R ST Microelectronics data | | |
| 8 | P4NB10 | STP4NB10
®
STP4NB100 STP4NB100FP
N - CHANNEL 1000V - 4Ω - 3.8A - TO-220/TO-220FP PowerMESH™ MOSFET
TYPE ST P4NB100 ST P4NB100FP
s s s s s
V DSS 1000 V 1000 V
R DS(on) < 4.4 Ω < 4.4 Ω
ID 3.8 A 3.8 A
TYPICAL RDS(on) = 4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TEST ST Microelectronics data | | |
| 9 | P4NB100 | STP4NB100
®
STP4NB100 STP4NB100FP
N - CHANNEL 1000V - 4Ω - 3.8A - TO-220/TO-220FP PowerMESH™ MOSFET
TYPE ST P4NB100 ST P4NB100FP
s s s s s
V DSS 1000 V 1000 V
R DS(on) < 4.4 Ω < 4.4 Ω
ID 3.8 A 3.8 A
TYPICAL RDS(on) = 4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TEST ST Microelectronics data | |
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