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Datasheet P2808B0 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category




P28 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
1P2803BMGN-Channel Enhancement Mode MOSFET

P2803BMG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 28mΩ @VGS = 10V ID 6A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25
UNIKC
UNIKC
datasheet P2803BMG pdf
2P2803HVGN-Channel Enhancement Mode MOSFET

P2803HVG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 27.5mΩ @VGS = 10V ID 6.5A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous
UNIKC
UNIKC
datasheet P2803HVG pdf
3P2803NVGN & P-Channel Enhancement Mode MOSFET

P2803NVG N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V RDS(ON) 27.5mΩ @VGS = 10V -30V 34mΩ @VGS = -10V ID Channel 7A N -6A P SOP- 08 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS Drain-Source Voltage N 30
UNIKC
UNIKC
datasheet P2803NVG pdf
4P2803NVGN- & P-Channel Enhancement Mode Field Effect Transistor

NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2803NVG SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS N-Channel P-Channel 30 -30 RDS(ON) 27.5m 34m ID 7A -6A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-S
NIKO-SEM
NIKO-SEM
datasheet P2803NVG pdf
5P2804BDGN-Channel Enhancement Mode MOSFET

P2804BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 28mΩ @VGS = 10V ID 25A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Curren
UNIKC
UNIKC
datasheet P2804BDG pdf
6P2804BDGN-Channel Logic Level Enhancement

NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P2804BDG TO-252 (DPAK) Lead-Free D PRODUCT SUMMARY V(BR)DSS 40V RDS(ON) 28m ID 10A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage
NIKO-SEM
NIKO-SEM
datasheet P2804BDG pdf
7P2804BIN-Channel Enhancement Mode MOSFET

P2804BI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 28mΩ @VGS = 10V ID 33A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current
UNIKC
UNIKC
datasheet P2804BI pdf



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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Sanken
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