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Datasheet P0260AI Equivalent ( PDF ) |
| P/N | Descripción | Fabr. | |
| P0260AI | N-Channel Enhancement Mode MOSFET P0260AI
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
4.6Ω @VGS = 10V
ID 2A
TO-251
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS, TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1 , 2 Avalanche Current3 Avalanche Energy3
TC = 25 °C TC = 100 �
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| P0260ATFS | N-Channel Enhancement Mode MOSFET
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