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Datasheet NE85639 Equivalent ( PDF ) - Transistor |
| P/N | Descripción | Fabr. | |
| NE85639 | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz
E
NE856 SERIES
LOW NOISE FIGURE: 1.1 dB at 1 GH- HIGH COLLECTOR CURRENT: 100 mA HIGH RELIABILITY METALLIZATION LOW COST
00 (CHIP)
VCC = 10 V, IC 7 mA MSG
4.0 3.5 3.0 2.5 NFMIN 2.0 1.5 1.0 0.4 0.5 1.0 2 3 4 5 GA MAG
20
Noise Figure, NF (dB)
15
Maximum Associated Gain, Maximum Stable Gain, Assoc
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| NE85639R | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz
E
NE856 SERIES
LOW NOISE FIGURE: 1.1 dB at 1 GH- HIGH COLLECTOR CURRENT: 100 mA HIGH RELIABILITY METALLIZATION LOW COST
00 (CHIP)
VCC = 10 V, IC 7 mA MSG
4.0 3.5 3.0 2.5 NFMIN 2.0 1.5 1.0 0.4 0.5 1.0 2 3 4 5 GA MAG
20
Noise Figure, NF (dB)
15
Maximum Associated Gain, Maximum Stable Gain, Assoc
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NE85 Datasheet ( Hoja de datos ) - Resultados que coinciden |
| P/N | Descripción | Fabr. | |
| NE85001 | 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
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| NE8500100 | 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
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| NE8500199 | 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
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| NE85002 | 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
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| NE8500200 | 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
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| NE555D | Single Bipolar Timer
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| NE5534N | Dual and Single Low Noise OP AMP
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| Esta página es del resultado de búsqueda del NE85639. Si pulsa el resultado de búsqueda de NE85639 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| P/N | Descripción | Fabr. | |
| 2N3904 | NXP's 2N3904 NPN transistor is a general-purpose, low-power, small-signal transistor. It is ideal for switching small loads, amplifying low-level signals, and for educational or hobby projects. |
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