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Datasheet NE856 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 18 | NE856 | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR NoiseDISFigure,NF(dB)CONTINUED Maximum Associated Gain, Maximum Stable Gain, Associated Gain, MAG, MSG, GA (dB)
NPN SILICON RF TRANSISTOR
NE856 SERIES
NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz
• LOW NOISE FIGURE: 1.1 dB at 1 GHz
• HIGH COL |
 NEC |
 |
| 17 | NE85600 | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz
E
NE856 SERIES
• LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST
00 (CHIP)
VCC = 10 V, IC 7 mA MSG
4.0 3.5 3.0 2.5 NFMIN 2.0 1.5 |
NEC |
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| 16 | NE85618 | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz
E
NE856 SERIES
• LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST
00 (CHIP)
VCC = 10 V, IC 7 mA MSG
4.0 3.5 3.0 2.5 NFMIN 2.0 1.5 |
NEC |
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| 15 | NE85619 | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz
E
NE856 SERIES
• LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST
00 (CHIP)
VCC = 10 V, IC 7 mA MSG
4.0 3.5 3.0 2.5 NFMIN 2.0 1.5 |
NEC |
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