Datasheet NE69039 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	NE69039	NPN Silicon Transistor PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR FEATURES • OUTPUT POWER AT 1dB COMPRESSION POINT: 27.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8 • 4 PIN MINI MOLD PACKAGE: NE69039 NE69039 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 39 +0.2 2.8 -0.	NEC

NE69 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
NE696M01	NPN SILICON HIGH FREQUENCY TRANSISTOR NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE696M01 FEATURES • • • • • HIGH fT: 14 GHz TYP at 3 V, 10 mA LOW NOISE FIGURE: NF = 1.6 dB TYP at 2 GHz HIGH GAIN: \|S21E\|2 = 14 dB TYP at 2 GHz 6 PIN SMALL MINI MOLD PACKAGE EXCELLENT LOW VOLTAGE, LOW C	CEL
NE699M01	NPN EPITAXIAL SILICON TRANSISTOR PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURES • • • • • HIGH fT: 16 GHz TYP at 2 V, 20 mA LOW NOISE FIGURE: NF = 1.1 dB TYP at 2 GHz HIGH GAIN: \|S21E\|2 = 14 dB TYP at f = 2 GHz 6 PIN SMALL MI	NEC
NE698M01	NPN EPITAXIAL SILICON TRANSISTOR PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURES • • • • • HIGH fT: 17 GHz TYP at 2 V, 7 mA LOW NOISE FIGURE: NF = 1.1 dB TYP at f = 2 GHz, 2 V, 1 mA HIGH GAIN: \|S21E\|2 = 15.5 dB TYP at f = 2 GH	NEC

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Número de pieza	Descripción	Fabricantes	PDF
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