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Datasheet NE02133 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1NE02133NPN SILICON HIGH FREQUENCY TRANSISTOR

NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression B E NE021 SERIES DESCRIPTION NEC's NE021 series of NPN silico
CEL
CEL
transistor
2NE02133NPN Silicon High Frequency Transistor

NEC
NEC
transistor
3NE02133-T1BNECs NPN SILICON HIGH FREQUENCY TRANSISTOR

NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E NE021 SERIES • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression s r e b m : u E n T t O r e a N r p a E S
ETC
ETC
transistor


NE0 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
1NE021NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E NE021 SERIES • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression s r e b m : u E n T t O r e a N r p a E S
ETC
ETC
datasheet NE021 pdf
2NE021NPN SILICON HIGH FREQUENCY TRANSISTOR

NEC
NEC
datasheet NE021 pdf
3NE021NPN SILICON HIGH FREQUENCY TRANSISTOR

NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression B E NE021 SERIES DESCRIPTION NEC's NE021 series of NPN silico
CEL
CEL
datasheet NE021 pdf
4NE021NPN Silicon High Frequency Transistor

NEC
NEC
datasheet NE021 pdf
5NE02100NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E NE021 SERIES • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression s r e b m : u E n T t O r e a N r p a E S
ETC
ETC
datasheet NE02100 pdf
6NE02100NPN SILICON HIGH FREQUENCY TRANSISTOR

NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression B E NE021 SERIES DESCRIPTION NEC's NE021 series of NPN silico
CEL
CEL
datasheet NE02100 pdf
7NE02100NPN Silicon High Frequency Transistor

NEC
NEC
datasheet NE02100 pdf



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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