Datasheet NE021 Equivalent ( PDF ) - Transistor

NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES HIGH INSERTION GAIN: 18.5 dB at 500 MH- LOW NOISE FIGURE: 1.5 dB at 500 MHz E NE021 SERIES HIGH POWER GAIN: 12 dB at 2 GHz B LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GH- Gain Compression s r e b m : u E n T t O r e a N r p a E S ng heet A i E w o l PL l as t o f a The this d ive: om omot 0 r f NE02135 r p 10 n 2 TYPICAL NOISE PARAMETERS o

NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES HIGH INSERTION GAIN: 18.5 dB at 500 MH- LOW NOISE FIGURE: 1.5 dB at 500 MH- HIGH POWER GAIN: 12 dB at 2 GH- LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GH- Gain Compression B E NE021 SERIES DESCRIPTION NEC's NE021 series of NPN silicon transistors provides economical solutions to wide ranges of amplifier and oscillator problems. Low noise and h

NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES HIGH INSERTION GAIN: 18.5 dB at 500 MH- LOW NOISE FIGURE: 1.5 dB at 500 MHz E NE021 SERIES HIGH POWER GAIN: 12 dB at 2 GHz B LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GH- Gain Compression s r e b m : u E n T t O r e a N r p a E S ng heet A i E w o l PL l as t o f a The this d ive: om omot 0 r f NE02135 r p 10 n 2 TYPICAL NOISE PARAMETERS o