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Datasheet N06 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 16 | N0600N | MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet
N0600N
MOS FIELD EFFECT TRANSISTOR
Description
R07DS0220EJ0100 Rev.1.00 Jan 25, 2011
The N0600N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Low on-state resistance ⎯ RDS(on)1 = 25 mΩ MAX. (VGS =10 V, ID = 15 A |
 Renesas |
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| 15 | N0601N | N-CHANNEL MOSFET Preliminary Data Sheet
N0601N
N-CHANNEL MOSFET FOR SWITCHING
Description
R07DS0557EJ0100 Rev.1.00 Nov 07, 2011
The N0601N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Low on-state resistance RDS (on) = 4.2 mΩ MAX. (VGS = 10 V, ID = 50 A |
Renesas |
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| 14 | N0602N | N-CHANNEL MOSFET Preliminary Data Sheet
N0602N
N-CHANNEL MOSFET FOR SWITCHING
Description
R07DS0558EJ0100 Rev.1.00 Nov 07, 2011
The N0602N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Low on-state resistance RDS (on) = 4.6 mΩ MAX. (VGS = 10 V, ID = 50 A |
Renesas |
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| 13 | N0603N | N-CHANNEL MOSFET Preliminary Data Sheet
N0603N
N-CHANNEL MOSFET FOR SWITCHING
Description
R07DS0559EJ0100 Rev.1.00 Nov 07, 2011
The N0603N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Low on-state resistance RDS (on) = 4.6 mΩ MAX. (VGS = 10 V, ID = 50 A |
Renesas |
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