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Datasheet MTW4N80E Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | MTW4N80E | TMOS POWER FET |  Motorola Semiconductors | data |
MTW Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | MTW10N100E | TMOS POWER FET w
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Motorola Semiconductors data | | |
| 2 | MTW10N100E | Power MOSFET, Transistor MTW10N100E co
m
Preferred Device
Power MOSFET t e 10 Amps, e 1000 Volts
N–Channel TO–247
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is designed  ON Semiconductor mosfet | | |
| 3 | MTW10N40E | TMOS E-FET POWER FIELD EFFECT TRANSISTOR w
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Motorola Semiconductors transistor | | |
| 4 | MTW14N50E | TMOS POWER FET w
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U 4 t
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Motorola Semiconductors data | | |
| 5 | MTW14N50E | Power MOSFET, Transistor MTW14N50E
4 Power MOSFET t 14 Amps, 500 Volts ee
N–Channel TO–247
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is designed to withstand high energy ON Semiconductor mosfet | | |
| 6 | MTW16N40E | TMOS POWER FET w
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Motorola Semiconductors data | | |
| 7 | MTW16N40E | Power MOSFET, Transistor MTW16N40E
4 Power MOSFET t 16 Amps, 400 Volts ee
N–Channel TO–247
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is designed to withstand high energy ON Semiconductor mosfet | |
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