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Datasheet MTP6P20E Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | MTP6P20E | TMOS POWER FET MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTP6P20E/D
™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor
Designer's
MTP6P20E
Motorola Preferred Device
P–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high energy in the av |
 Motorola Semiconductors |
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| 1 | MTP6P20E | Power MOSFET ( Transistor ) MTP6P20E
Preferred Device
Power MOSFET 6 Amps, 200 Volts
P−Channel TO−220
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high s |
 ON Semiconductor |
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