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Datasheet MTP5N40E Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | MTP5N40E | TMOS POWER FET 5.0 AMPERES 400 VOLTS RDS(on) = 1.0 OHM MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTP5N40E/D
™ Data Sheet TMOS E-FET.™ High Energy Power FET
Designer's
MTP5N40E
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This advanced high voltage TMOS E–FET is designed to withstand high energy in t |
 Motorola Semiconductors |
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| 3 | MTP5N40E | Trans MOSFET N-CH 400V 5A 3-Pin(3+Tab) TO-220 |
 New Jersey Semiconductor |
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| 2 | MTP5N40E | Trans MOSFET N-CH 400V 5A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
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| 1 | MTP5N40E | High Energy Power FET MTP5N40E
Designer’s™ Data Sheet TMOS E−FET.™ High Energy Power FET
N−Channel Enhancement−Mode Silicon Gate
This advanced high voltage TMOS E−FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain−to−sou |
 ON Semiconductor |
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