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Datasheet MTP52N06V Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | MTP52N06V | TMOS POWER FET 52 AMPERES 60 VOLTS RDS(on) = 0.022 OHM MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTP52N06V/D
TMOS Power Field Effect Transistor
TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell d |
 Motorola Semiconductors |
 |
| 2 | MTP52N06V | Power MOSFET ( Transistor ) MTP52N06V
Preferred Device
Power MOSFET 52 Amps, 60 Volts
N−Channel TO−220
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devi |
 ON Semiconductor |
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| 1 | MTP52N06VL | TMOS POWER FET 52 AMPERES 60 VOLTS RDS(on) = 0.025 OHM MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTP52N06VL/D
TMOS Power Field Effect Transistor
TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell |
Motorola Semiconductors |
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