|
|
Datasheet MTP4N50E Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | MTP4N50E | TMOS POWER FET 4.0 AMPERES 500 VOLTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Designer's
TMOS E-FET .™ High Energy Power FET N–Channel Enhancement–Mode Silicon Gate
This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a d |
Motorola Semiconductors |
|
2 | MTP4N50E | Trans MOSFET N-CH 500V 4A 3-Pin(3+Tab) TO-220 Rail |
New Jersey Semiconductor |
|
1 | MTP4N50E | High Energy Power FET MTP4N50E
Designer’s™ Data Sheet TMOS E−FET.™ High Energy Power FET
N−Channel Enhancement−Mode Silicon Gate
This advanced high voltage TMOS E−FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain−to−sou |
ON Semiconductor |
Esta página es del resultado de búsqueda del MTP4N50E. Si pulsa el resultado de búsqueda de MTP4N50E se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |