Datasheet MTC35 Equivalent ( PDF ) - MOSFET

MTC35-150 Page 2 - MTC35-50 Page 15 - MTC75-150 MTC35 & 50 COTS Component for Defense & Avionics Applications Environmental Performance to MIL STD 810 10 to 50 VDC Transient Input Range 10 to 40 VDC Steady State Input Range 55 ˚C to 100 ˚C Operation Cooling Plates and Mounting Holes for Easy Integration Synchronous Rectification on Low Voltage Outputs MIL STD 461 and DEF S

CYStech Electronics Corp. N & P-Channel Enhancement Mode Power MOSFET Spec. No. : C449J4 Issued Date : 2009.03.11 Revised Date : Page No. : 1, 11 MTC3504BJ4 Features Low Gate Charge Simple Drive Requirement RoHS compliant & Halogen-free package N-CH BVDSS ID RDSON(MAX) 40V 12A 35mΩ P-CH -40V -9A 44mΩ Equivalent Circuit MTC3504BJ4 Outline TO-252-4L G：Gate D：Drain S：Source Absol

CYStech Electronics Corp. Spec. No. : C416G6 Issued Date : 2007.07.13 Revised Date :2009.03.16 Page No. : 1, 8 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC3585G6 Description The MTC3585G6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single TSOP-6 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistan

CYStech Electronics Corp. Spec. No. : C416N6 Issued Date : 2007.07.12 Revised Date : Page No. : 1, 8 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC3585N6 Description The MTC3585N6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOT-26 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cos

CYStech Electronics Corp. Spec. No. : C416N8J Issued Date : 2017.01.09 Revised Date : age No. : 1, 13 N- AND P-Channel Enhancement Mode MOSFET MTC3585N8J BVDSS ID@VGS=4.5V(-4.5V), TA=25°C ID@VGS=4.5V(-4.5V), TC=25°C RDSON@VGS=4.5V(-4.5V) typ. RDSON@VGS=2.5V(-2.5V) typ. N-CH 20V 5.5A 8.0A 20.5mΩ 24.5mΩ P-CH -20V -3.5A -5.1A 60.1mΩ 79.4mΩ Features Simple drive requirement Low on-resista