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Datasheet MT2301 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | MT2301 | P-Channel Enhancement Mode MOSFET DESCRIPTION
MT2301
P- Channel Enhancement Mode MOSFET
The MT2301 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices |
 MATRIX MICROTECH |
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| 2 | MT2301 | P-Channel Enhancement Mode Field Effect Transistor MMostech
Mostech electronics C orp.
MT 2301
P-C hannel E nhancement Mode Field E ffect Trans is tor
P R ODUC T S UMMAR Y
VDS S
ID
R DS (ON) ( m W ) Max
-20V
-3.6A
80 @ VGS = -4.5V 100 @ VGS = -2.5V
F E AT UR E S S uper high dense cell design for low R DS(ON).
R ugged and reliable. S OT-23 |
 Mostech |
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| 1 | MT2301 | P-Channel Enhancement Mode Field Effect Transistor MT2301
MOS-TECH Semiconductor Co.,LTD
MT2301
Single P-Channel Power MOSFET
General Description
This P-Channel Power MOSFET is pro duced using MOS-TECH Semiconductor’s advanced PowerTrench process that has b een especially tailored to minimize the on-state r esistance and yet maintain low gate ch |
 Mos-Tech Semiconductor |
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