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Datasheet MRF951 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | MRF951 | NPN SILICON RF TRANSISTOR MRF951
NPN SILICON RF TRANSISTOR
DESCRIPTION:
The ASI MRF951 is Designed for high gain. Low noise small-signal amplifiers. Applications up to 2.0 GHz.
FEATURES:
• Low Noise Figure • High Gain • Omnigold™ Metalization System
MAXIMUM RATINGS
IC 100 mA
VCBO
20 V
VCEO
10 V
VEBO
1.5 V
|  ASI | transistor |
| 2 | MRF951 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
MRF951
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Features
• • • • Fully Implanted Base and Emitter Structure. High Gain, Gain at Optimum Noise Figure = 14 dB @ 1 GHz Low Noi |  Microsemi Corporation | transistor |
| 3 | MRF9511 | (MRF9511 / MRF957) NPN Silicon Low Noise / High-Frequency Transistors
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBR951ALT1/D
The RF Line
NPN Silicon Low Noise, High-Frequency Transistors
Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a v |  Motorola Semiconductors | transistor |
MRF Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | MRF | Fast Acting Radial Lead Micro Fuse Series Type MRF
MRFD0106
EMRFD1005A1
RoHS Compliant
Fast Acting Radial Lead Micro Fuse Series
Catalog Number Ampere Rating Typical Volt-drop Melting I2T Cold @100% In < 10 mSec Resistance (ohm) (Volt) max. (A2 Sec) Melting I2T @10 In (A2 Sec) Maximum Power Dissipation (W)
MRF 50 MRF 63 MRF 80 MRF 100 MR  Bel Fuse  | ||
| 2 | MRF-261 | High Band VHF FM Power Transistor ELEFLOW
www.eleflow.com
TECHNOLOGIES
MRF261
High band/VHF FM power transistor
MRF261
Description: MRF261 is designed as 10W, 5.2dB, 12.5V, 136-175MHz, TO220 high band/VHF FM transistors. Maximum Ratings at TU = 25 Symbol BVCES BVCEO BVEBO IC Ptot TSTG TjM Data at TU = 25 Sy  Eleflow | ||
| 3 | MRF10005 | The RF Line Microwave Power Transistor SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF10005/D
The RF Line
Microwave Power Transistor
. . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high overall duty cycles. • Guaranteed Performanc  Tyco | ||
| 4 | MRF10005 | MICROWAVE POWER TRANSISTOR MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF10005/D
Microwave Power Transistor
. . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high overall duty cycles. • Guaranteed P Motorola Semiconductors | ||
| 5 | MRF1000MB | MICROWAVE POWER TRANSISTORS NPN SILICON SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF1000MB/D
The RF Line
Microwave Pulse Power Transistors
Designed for Class A and AB common emitter amplifier applications in the low–power stages of IFF, DME, TACAN, radar transmitters, and CW systems. • Guaranteed Performance @ 1090 MHz, Tyco | ||
| 6 | MRF1001A | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
MRF1001A
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Features
• • • • Silicon NPN, To-39 packaged VHF/UHF Transistor Ftau = 3.0 Ghz (typ) @ 300MHz, 14v, 90mA,
G
U max
2
= 11.5 dB (typ) @ 300 MHz,  Microsemi | ||
| 7 | MRF1002 | MICROWAVE POWER TRANSISTOR MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF1002MA/D
Microwave Pulse Power Transistors
. . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Motorola Semiconductors |
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nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
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