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Datasheet MMBV105G Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | MMBV105G | VOLTAGE VARIABLE CAPACITANCE DIODE .
MAXIMUM RATINGS
Rating Reverse Voltage Forward Current
Symbol VR
if .
THERMAL CHARACTERISTICS
Characteristic
Symbol
"Total Device Dissipation, T/ = 25°C Derate above 25°C
PD
Storage Temperature
T stg
•Thermal Resistance Junction to Ambient
R &JA
"Package mounted on 99.5% alumina 10 |
 Motorola Semiconductors |
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| 3 | MMBV105GLT1 | Silicon Tuning Diode MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Tuning Diode
This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods. • Controlled and Uniform Tuning Ratio
MMBV105G |
Motorola Semiconductors |
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| 2 | MMBV105GLT1 | Silicon Tuning Diode LESHAN RADIO COMPANY, LTD.
Silicon Tuning Diode
This device is designed in the surface Mount package for general frequency control and tuning applications.It provides solid-state reliability in replacement of mechanical tuning methods.
• Controlled and Uniform Tuning Ration
3 CATHODE
1 ANODE
M |
 Leshan Radio Company |
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| 1 | MMBV105GLT1 | Silicon Tuning Diode ON Semiconductort
Silicon Tuning Diode
This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods. • Controlled and Uniform Tuning Ratio
MAXIMUM RATINGS
Rating Revers |
 ON |
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