Datasheet MMBTA64 Equivalent ( PDF ) - Transistor

MMBTA63 , MMBTA64 PNP Silicon Epitaxial Planar Transistor for general purpose application, darlington transistor Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range SOT-23 Plastic Package Symbol -VCBO -VCEO -VEBO -IC Ptot Tj TS Value 30 30 10 500

MPSA64 , MMBTA64 , PZTA64 Discrete POWER & Signal Technologies MPSA64 MMBTA64 C PZTA64 C E C B E C B TO-92 E SOT-23 Mark: 2V B SOT-223 PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol VCES VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Ba

MMBTA63 , MMBTA64 PNP SURFACE MOUNT DARLINGTON TRANSISTOR Features Epitaxial Planar Die Construction Complementary NPN Types Available (MMBTA13 , MMBTA14) Ideal for Low Power Amplification and Switching High Current Gain Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 3 and 4) Mechanical Data Case: SOT-23 Case Material: Molded Plastic. UL Flammability Classification