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Datasheet MMBT6517 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | MMBT6517 | HIGH VOLTAGE TRANSISTOR MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current
—Collector Current Continuous
Symbol VCEO VCBO VEBO
IB
c
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation, T"a = 25°C Derate above 25°C
PD
Storage Temperature
T |
 Motorola Semiconductors |
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| 3 | MMBT6517 | High Voltage Transistors SMD Type
Transistors
Features
NPN Silicon
High Voltage Transistors MMBT6517
SOT-23
2.9+0.1 -0.1
0.4+0.1 -0.1
3
+0.12.4 -0.1
12
0.95+0.1 -0.1 1.9+0.1 -0.1
Absolute Maximum Ratings Ta = 25
Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Base current Collector cur |
 Kexin |
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| 2 | MMBT6517LT1 | High Voltage Transistor MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBT6517LT1/D
High Voltage Transistor
NPN Silicon
COLLECTOR 3 1 BASE
MMBT6517LT1
Motorola Preferred Device
3
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Base Current Collec |
Motorola Semiconductors |
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| 1 | MMBT6517LT1 | High Voltage Transistors(NPN Silicon) |
 Leshan Radio Company |
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