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Datasheet MMBT5088 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 9 | MMBT5088 | Silicon Epitaxial Planar Transistor Production specification
Silicon Epitaxial Planar Transistor
FEATURES
z Excellent HFE Linearity. z Power dissipation.(PC=0.2W).
Pb
Lead-free
MMBT5088/5089
APPLICATIONS
z This device is designed for low noise,high gain,general purpose amplifier applications at collector currents from 1μA to 50m |
 Galaxy Microelectronics |
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| 8 | MMBT5088 | Low Noise NPN Transistor Low Noise NPN Transistor Surface Mount
P b Lead(Pb)-Free
Maximum Ratings
Rating Collector-Emitter Voltage Collector-B as e Voltage E m itter-B as e Voltage Collector Current-Continuous
Thermal Characteristics
Characteristics Total Device Dis s ipation FR -5 B oard (1) TA=25 C Derate above 2 5 C Ther |
 WEITRON |
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| 7 | MMBT5088 | NPN General Purpose Amplifier SMD Type
TransistIoCrs
NPN General Purpose Amplifier
MMBT5088,MMBT5089
Features
NPN general purpose amplifier
+0.12.4 -0.1
SOT-23
2.9+0.1 -0.1
0.4+0.1 -0.1
3
12 0.95+0.1
-0.1
1.9+0.1 -0.1
0-0.1 +0.10.38
-0.1
+0.10.97 -0.1
+0.11.3 -0.1
0.55 0.4
Unit: mm
0.1+0.05 -0.01
1.Base 2.Emitter 3.col |
 Kexin |
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| 6 | MMBT5088 | NPN (LOW NOISE TRANSISTOR) |
 Samsung |
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| Número de pieza | Descripción | Fabricantes | |
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