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Datasheet MMBT3904LT1 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | MMBT3904LT1 | NPN Transistor Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors
MMBT3904LT1 TRANSISTOR (NPN)
FEATURES
SOT-23
1. BASE 2. EMITTER 3. COLLECTOR
Power dissipation
PCM: 0.2 W (Tamb=25℃)
Collector current
ICM: 0.2 Collector-base voltage
A
V(BR)CBO:
60 V
Operating and |
 Tuofeng Semiconductor |
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| 5 | MMBT3904LT1 | NPN Transistor FEATURES
Power dissipation, PCM:0.2W (Tamb=25℃) Collector current, ICM: 0.2A Collector-base voltage, V(BR)CBO: 60V Operating and storage junction temperature range:
TJ, Tstg: -55℃ to +150℃ SOT-23 plastic-encapsulate package Device Marking: AM1
MMBT3904LT1
Transistors (NPN)
ELE |
 Silicon Standard |
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| 4 | MMBT3904LT1 | General Purpose Transistor MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBT3904LT1/D
General Purpose Transistor
NPN Silicon
COLLECTOR 3 1 BASE
MMBT3904LT1
Motorola Preferred Device
3
2 EMITTER
1 2
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage |
 Motorola Semiconductors |
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| 3 | MMBT3904LT1 | General Purpose Transistor(NPN Silicon) MMBT3904LT1
Preferred Device
General Purpose Transistor
NPN Silicon
Features
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO IC Value 40 60 6.0 200 Unit |
 ON |
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